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Engineering the SiOx interfacial layer of Si-based metal-insulator-semiconductor junction for photoelectrochemical hydrogen production.

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Title: Engineering the SiOx interfacial layer of Si-based metal-insulator-semiconductor junction for photoelectrochemical hydrogen production.
Authors: Li, Yao1 (AUTHOR), Ding, Chenglong1 (AUTHOR), Li, Yanming1 (AUTHOR), Fang, Jiongchong2 (AUTHOR), Zeng, Guosong2 (AUTHOR), He, Jingfu1 (AUTHOR) hejf27@mail.sysu.edu.cn, Li, Changli1 (AUTHOR) lichli5@mail.sysu.edu.cn
Source: Journal of Catalysis. Jun2024, Vol. 434, pN.PAG-N.PAG. 1p.
Subjects: Photocathodes, Hydrogen production, Metal insulator semiconductors, Chemical processes, Interfacial resistance, Hydrogen as fuel, Transition metals
Abstract: A simple chemical oxidation process is introduced to grow SiO x to form p-Si based MIS photocathode with high-quality insulating layer for efficient PEC hydrogen production. [Display omitted] • A simple chemical oxidation process was introduced to grow high quality SiO x for the passivation of p-Si. • The carrier flux, barrier height and interfacial resistance of p-Si MIS junction can be tuned by controlling the thickness and quality of SiO x. • AFM and XPS analysis proved that the chemically oxidized SiO x is more uniform, with a higher Si4+/Si3+ ratio. • Up to 6% of applied bias photon-to-current efficiency (ABPE) was obtained with p-Si/SiO x /Ti/Pt photocathode. Photoelectrochemical (PEC) water splitting provides a potential method to produce renewable hydrogen energy, but there is still plenty of room for improving the efficiency and stability of photoelectrodes. In this paper, we present a metal–insulator-semiconductor (MIS) structure based on p-Si that enables stable and efficient water splitting by engineering the interfacial insulating layer. The silicon oxide (SiO x) film with appropriate thickness and low defects is regrown by a chemical oxidation process, which provides a high-quality insulating layer to passivate the p-Si. The carrier flux, barrier height and interfacial resistance of p-Si based MIS junction can be systematically tuned by controlling the thickness and quality of SiO x layer. Under AM 1.5G illumination, the optimized p-Si/SiO x /Ti/Pt photoelectrode shows an onset potential of 0.5 V vs. RHE, a maximum photocurrent of 28 mA/cm2 and a high applied bias photon-to-current efficiency (ABPE) of 6 %. These results have significant implications for constructing MIS photoelectrodes towards effective water splitting. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
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Abstract:A simple chemical oxidation process is introduced to grow SiO x to form p-Si based MIS photocathode with high-quality insulating layer for efficient PEC hydrogen production. [Display omitted] • A simple chemical oxidation process was introduced to grow high quality SiO x for the passivation of p-Si. • The carrier flux, barrier height and interfacial resistance of p-Si MIS junction can be tuned by controlling the thickness and quality of SiO x. • AFM and XPS analysis proved that the chemically oxidized SiO x is more uniform, with a higher Si4+/Si3+ ratio. • Up to 6% of applied bias photon-to-current efficiency (ABPE) was obtained with p-Si/SiO x /Ti/Pt photocathode. Photoelectrochemical (PEC) water splitting provides a potential method to produce renewable hydrogen energy, but there is still plenty of room for improving the efficiency and stability of photoelectrodes. In this paper, we present a metal–insulator-semiconductor (MIS) structure based on p-Si that enables stable and efficient water splitting by engineering the interfacial insulating layer. The silicon oxide (SiO x) film with appropriate thickness and low defects is regrown by a chemical oxidation process, which provides a high-quality insulating layer to passivate the p-Si. The carrier flux, barrier height and interfacial resistance of p-Si based MIS junction can be systematically tuned by controlling the thickness and quality of SiO x layer. Under AM 1.5G illumination, the optimized p-Si/SiO x /Ti/Pt photoelectrode shows an onset potential of 0.5 V vs. RHE, a maximum photocurrent of 28 mA/cm2 and a high applied bias photon-to-current efficiency (ABPE) of 6 %. These results have significant implications for constructing MIS photoelectrodes towards effective water splitting. [ABSTRACT FROM AUTHOR]
ISSN:00219517
DOI:10.1016/j.jcat.2024.115533