APA (7th ed.) Citation

Li, Y., Ding, C., Li, Y., Fang, J., Zeng, G., He, J., & Li, C. (2024). Engineering the SiOx interfacial layer of Si-based metal-insulator-semiconductor junction for photoelectrochemical hydrogen production. Journal of Catalysis, 434, N.PAG. https://doi.org/10.1016/j.jcat.2024.115533

Chicago Style (17th ed.) Citation

Li, Yao, Chenglong Ding, Yanming Li, Jiongchong Fang, Guosong Zeng, Jingfu He, and Changli Li. "Engineering the SiOx Interfacial Layer of Si-based Metal-insulator-semiconductor Junction for Photoelectrochemical Hydrogen Production." Journal of Catalysis 434 (2024): N.PAG. https://doi.org/10.1016/j.jcat.2024.115533.

MLA (9th ed.) Citation

Li, Yao, et al. "Engineering the SiOx Interfacial Layer of Si-based Metal-insulator-semiconductor Junction for Photoelectrochemical Hydrogen Production." Journal of Catalysis, vol. 434, 2024, p. N.PAG, https://doi.org/10.1016/j.jcat.2024.115533.