View in EDS

Engineering the SiOx interfacial layer of Si-based metal-insulator-semiconductor junction for photoelectrochemical hydrogen production.

Saved in:
Bibliographic Details
Title: Engineering the SiOx interfacial layer of Si-based metal-insulator-semiconductor junction for photoelectrochemical hydrogen production.
Authors: Li, Yao1 (AUTHOR), Ding, Chenglong1 (AUTHOR), Li, Yanming1 (AUTHOR), Fang, Jiongchong2 (AUTHOR), Zeng, Guosong2 (AUTHOR), He, Jingfu1 (AUTHOR) hejf27@mail.sysu.edu.cn, Li, Changli1 (AUTHOR) lichli5@mail.sysu.edu.cn
Source: Journal of Catalysis. Jun2024, Vol. 434, pN.PAG-N.PAG. 1p.
Subjects: Photocathodes, Hydrogen production, Metal insulator semiconductors, Chemical processes, Interfacial resistance, Hydrogen as fuel, Transition metals
Abstract: A simple chemical oxidation process is introduced to grow SiO x to form p-Si based MIS photocathode with high-quality insulating layer for efficient PEC hydrogen production. [Display omitted] • A simple chemical oxidation process was introduced to grow high quality SiO x for the passivation of p-Si. • The carrier flux, barrier height and interfacial resistance of p-Si MIS junction can be tuned by controlling the thickness and quality of SiO x. • AFM and XPS analysis proved that the chemically oxidized SiO x is more uniform, with a higher Si4+/Si3+ ratio. • Up to 6% of applied bias photon-to-current efficiency (ABPE) was obtained with p-Si/SiO x /Ti/Pt photocathode. Photoelectrochemical (PEC) water splitting provides a potential method to produce renewable hydrogen energy, but there is still plenty of room for improving the efficiency and stability of photoelectrodes. In this paper, we present a metal–insulator-semiconductor (MIS) structure based on p-Si that enables stable and efficient water splitting by engineering the interfacial insulating layer. The silicon oxide (SiO x) film with appropriate thickness and low defects is regrown by a chemical oxidation process, which provides a high-quality insulating layer to passivate the p-Si. The carrier flux, barrier height and interfacial resistance of p-Si based MIS junction can be systematically tuned by controlling the thickness and quality of SiO x layer. Under AM 1.5G illumination, the optimized p-Si/SiO x /Ti/Pt photoelectrode shows an onset potential of 0.5 V vs. RHE, a maximum photocurrent of 28 mA/cm2 and a high applied bias photon-to-current efficiency (ABPE) of 6 %. These results have significant implications for constructing MIS photoelectrodes towards effective water splitting. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Catalysis is the property of Academic Press Inc. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
FullText Text:
  Availability: 0
Header DbId: egs
DbLabel: Engineering Source
An: 177318431
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Engineering the SiOx interfacial layer of Si-based metal-insulator-semiconductor junction for photoelectrochemical hydrogen production.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Li%2C+Yao%22">Li, Yao</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Ding%2C+Chenglong%22">Ding, Chenglong</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Li%2C+Yanming%22">Li, Yanming</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Fang%2C+Jiongchong%22">Fang, Jiongchong</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zeng%2C+Guosong%22">Zeng, Guosong</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22He%2C+Jingfu%22">He, Jingfu</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> hejf27@mail.sysu.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Li%2C+Changli%22">Li, Changli</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> lichli5@mail.sysu.edu.cn</i>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Journal+of+Catalysis%22">Journal of Catalysis</searchLink>. Jun2024, Vol. 434, pN.PAG-N.PAG. 1p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Photocathodes%22">Photocathodes</searchLink><br /><searchLink fieldCode="DE" term="%22Hydrogen+production%22">Hydrogen production</searchLink><br /><searchLink fieldCode="DE" term="%22Metal+insulator+semiconductors%22">Metal insulator semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Chemical+processes%22">Chemical processes</searchLink><br /><searchLink fieldCode="DE" term="%22Interfacial+resistance%22">Interfacial resistance</searchLink><br /><searchLink fieldCode="DE" term="%22Hydrogen+as+fuel%22">Hydrogen as fuel</searchLink><br /><searchLink fieldCode="DE" term="%22Transition+metals%22">Transition metals</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: A simple chemical oxidation process is introduced to grow SiO x to form p-Si based MIS photocathode with high-quality insulating layer for efficient PEC hydrogen production. [Display omitted] • A simple chemical oxidation process was introduced to grow high quality SiO x for the passivation of p-Si. • The carrier flux, barrier height and interfacial resistance of p-Si MIS junction can be tuned by controlling the thickness and quality of SiO x. • AFM and XPS analysis proved that the chemically oxidized SiO x is more uniform, with a higher Si4+/Si3+ ratio. • Up to 6% of applied bias photon-to-current efficiency (ABPE) was obtained with p-Si/SiO x /Ti/Pt photocathode. Photoelectrochemical (PEC) water splitting provides a potential method to produce renewable hydrogen energy, but there is still plenty of room for improving the efficiency and stability of photoelectrodes. In this paper, we present a metal–insulator-semiconductor (MIS) structure based on p-Si that enables stable and efficient water splitting by engineering the interfacial insulating layer. The silicon oxide (SiO x) film with appropriate thickness and low defects is regrown by a chemical oxidation process, which provides a high-quality insulating layer to passivate the p-Si. The carrier flux, barrier height and interfacial resistance of p-Si based MIS junction can be systematically tuned by controlling the thickness and quality of SiO x layer. Under AM 1.5G illumination, the optimized p-Si/SiO x /Ti/Pt photoelectrode shows an onset potential of 0.5 V vs. RHE, a maximum photocurrent of 28 mA/cm2 and a high applied bias photon-to-current efficiency (ABPE) of 6 %. These results have significant implications for constructing MIS photoelectrodes towards effective water splitting. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Catalysis is the property of Academic Press Inc. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=177318431
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1016/j.jcat.2024.115533
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 1
        StartPage: N.PAG
    Subjects:
      – SubjectFull: Photocathodes
        Type: general
      – SubjectFull: Hydrogen production
        Type: general
      – SubjectFull: Metal insulator semiconductors
        Type: general
      – SubjectFull: Chemical processes
        Type: general
      – SubjectFull: Interfacial resistance
        Type: general
      – SubjectFull: Hydrogen as fuel
        Type: general
      – SubjectFull: Transition metals
        Type: general
    Titles:
      – TitleFull: Engineering the SiOx interfacial layer of Si-based metal-insulator-semiconductor junction for photoelectrochemical hydrogen production.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Li, Yao
      – PersonEntity:
          Name:
            NameFull: Ding, Chenglong
      – PersonEntity:
          Name:
            NameFull: Li, Yanming
      – PersonEntity:
          Name:
            NameFull: Fang, Jiongchong
      – PersonEntity:
          Name:
            NameFull: Zeng, Guosong
      – PersonEntity:
          Name:
            NameFull: He, Jingfu
      – PersonEntity:
          Name:
            NameFull: Li, Changli
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 06
              Text: Jun2024
              Type: published
              Y: 2024
          Identifiers:
            – Type: issn-print
              Value: 00219517
          Numbering:
            – Type: volume
              Value: 434
          Titles:
            – TitleFull: Journal of Catalysis
              Type: main
ResultId 1