Design and Simulation of 4-State SRAMs Using 4-State Quantum Dot Gate (QDG) FETs.
Saved in:
| Title: | Design and Simulation of 4-State SRAMs Using 4-State Quantum Dot Gate (QDG) FETs. |
|---|---|
| Authors: | Khan, B.1 (AUTHOR), Saman, B.2 (AUTHOR), Almalki, A.1 (AUTHOR), Gudlavalleti, R. H.1,3 (AUTHOR), Chandy, J.1 (AUTHOR), Heller, E.4 (AUTHOR), Jain, F. C.1 (AUTHOR) faquir.jain@uconn.edu |
| Source: | International Journal of High Speed Electronics & Systems. Jun-Sep2024, Vol. 33 Issue 2/3, p1-5. 5p. |
| Subjects: | Quantum gates, Quantum dots, Static random access memory, Oxides |
| Abstract: | This paper describes fabrication of Quantum Dot Gate n-FETs using SiOx-cladded Si quantum dot self-assembled on the tunnel gate oxide. Experimental I-V characteristics exhibiting 4-states are presented. Simulation is presented for the operation of viable 4-state SRAMs using QDG-FETs. [ABSTRACT FROM AUTHOR] |
| Copyright of International Journal of High Speed Electronics & Systems is the property of World Scientific Publishing Company and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
Be the first to leave a comment!
