APA (7th ed.) Citation

Lin, H., Xu, L., Liu, H., Hou, T., & Liu, N. (2025). Tunable electronic band gap of bilayer silicon carbide (SiC): The effect of interlayer stacking, electric field and strain. Physica B, 700, N.PAG. https://doi.org/10.1016/j.physb.2025.416890

Chicago Style (17th ed.) Citation

Lin, Heng-Fu, Lu-Ya Xu, Hui-Ying Liu, Ting-Ping Hou, and Nan-Shu Liu. "Tunable Electronic Band Gap of Bilayer Silicon Carbide (SiC): The Effect of Interlayer Stacking, Electric Field and Strain." Physica B 700 (2025): N.PAG. https://doi.org/10.1016/j.physb.2025.416890.

MLA (9th ed.) Citation

Lin, Heng-Fu, et al. "Tunable Electronic Band Gap of Bilayer Silicon Carbide (SiC): The Effect of Interlayer Stacking, Electric Field and Strain." Physica B, vol. 700, 2025, p. N.PAG, https://doi.org/10.1016/j.physb.2025.416890.