Cu-Contamination-Free Hybrid Bonding via MoS 2 Passivation Layer.
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| Title: | Cu-Contamination-Free Hybrid Bonding via MoS 2 Passivation Layer. |
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| Authors: | Choi, Hyunbin1 (AUTHOR), Kim, Kyungman2,3 (AUTHOR), Son, Sihoon2,3 (AUTHOR), Lee, Dongho4 (AUTHOR), Je, Seongyun2,3,5 (AUTHOR), Kang, Jieun5,6 (AUTHOR), Jeong, Sunjae6,7 (AUTHOR), Kim, Doo San7,8 (AUTHOR), Lee, Minjong1,8 (AUTHOR), Kim, Jiyoung2,7,8 (AUTHOR), Kim, Taesung1,2,3,4 (AUTHOR) tkim@skku.com |
| Source: | Nanomaterials (2079-4991). Oct2025, Vol. 15 Issue 20, p1600. 11p. |
| Subjects: | Molybdenum disulfide, Electronic packaging, Plasma materials processing, Copper films, Memristors, Integrated circuit interconnections, Sealing (Technology) |
| Abstract: | Hybrid bonding technology has emerged as a critical 3D integration solution for advanced semiconductor packaging, enabling simultaneous bonding of metal interconnects and dielectric materials. However, conventional hybrid bonding processes face significant contamination challenges during O2 plasma treatment required for OH group formation on SiCN or the other dielectric material surfaces. The aggressive plasma conditions cause Cu sputtering and metal migration, leading to chamber and substrate contamination that accumulates over time and degrades process reliability. In this work, we present a novel approach to address these contamination issues by implementing a molybdenum disulfide (MoS2) barrier layer formed through plasma-enhanced chemical vapor deposition (PECVD) sulfurization of Mo films. The ultrathin MoS2 layer acts as an effective barrier preventing Cu sputtering during O2 plasma processing, thereby eliminating chamber contamination, and it also enables post-bonding electrical connectivity through controlled Cu filament formation via memristive switching mechanisms. When voltage is applied to the Cu-MoS2-Cu structure after hybrid bonding, Cu ions migrate through the MoS2 layer to form conductive filaments, establishing reliable electrical connections without compromising the bonding interface integrity. This innovative approach successfully resolves the fundamental contamination problem in hybrid bonding while maintaining excellent electrical performance, offering a pathway toward contamination-free and high-yield hybrid bonding processes for next-generation 3D-integrated devices. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | Hybrid bonding technology has emerged as a critical 3D integration solution for advanced semiconductor packaging, enabling simultaneous bonding of metal interconnects and dielectric materials. However, conventional hybrid bonding processes face significant contamination challenges during O2 plasma treatment required for OH group formation on SiCN or the other dielectric material surfaces. The aggressive plasma conditions cause Cu sputtering and metal migration, leading to chamber and substrate contamination that accumulates over time and degrades process reliability. In this work, we present a novel approach to address these contamination issues by implementing a molybdenum disulfide (MoS2) barrier layer formed through plasma-enhanced chemical vapor deposition (PECVD) sulfurization of Mo films. The ultrathin MoS2 layer acts as an effective barrier preventing Cu sputtering during O2 plasma processing, thereby eliminating chamber contamination, and it also enables post-bonding electrical connectivity through controlled Cu filament formation via memristive switching mechanisms. When voltage is applied to the Cu-MoS2-Cu structure after hybrid bonding, Cu ions migrate through the MoS2 layer to form conductive filaments, establishing reliable electrical connections without compromising the bonding interface integrity. This innovative approach successfully resolves the fundamental contamination problem in hybrid bonding while maintaining excellent electrical performance, offering a pathway toward contamination-free and high-yield hybrid bonding processes for next-generation 3D-integrated devices. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 20794991 |
| DOI: | 10.3390/nano15201600 |
