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Superparamagnetic and stochastic-write magnetic tunnel junctions for high-speed true random number generation in advanced computing.

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Title: Superparamagnetic and stochastic-write magnetic tunnel junctions for high-speed true random number generation in advanced computing.
Authors: Sun, Jonathan Z1 (AUTHOR) jonsun@us.ibm.com, Safranski, Christopher1 (AUTHOR), Koswatta, Siyuranga1 (AUTHOR), Hashemi, Pouya1 (AUTHOR), Kent, Andrew D2 (AUTHOR)
Source: Journal of Physics D: Applied Physics. 2026, Vol. 59 Issue 1, p1-13. 13p.
Subjects: Random number generators, CMOS integrated circuits, Cryptography, Superparamagnetic materials, Magnetic tunnelling
Abstract: We review two magnetic tunnel junction (MTJ) approaches for compact, low-power, CMOS-integrated true random number generation (TRNG). The first employs passive-read, easy-plane superparamagnetic MTJs (sMTJs) that generate thermal-fluctuation-driven bitstreams at 0.5–1 Gb s−1 per device. The second uses MTJs with magnetically stable free layers, operated with stochastic write pulses to achieve switching probabilities of about 0.5 (i.e. write error rates of ≃ 0.5 ), achieving ≳ 0.1 Gb s−1 per device; we refer to these as stochastic-write MTJs (SW-MTJs). Randomness from both approaches has been validated using the NIST SP 800-22r1a test suites. sMTJ approach uses a read-only cell with low power and can be compatible with most advanced CMOS nodes, while SW-MTJs leverage standard CMOS MTJ process flows, enabling co-integration with embedded spin-transfer torque magnetic random access memory. Both approaches can achieve deep sub-0.01 µ m2 MTJ footprints and offer orders-of-magnitude better energy efficiency than CPU/GPU-based generators, enabling placement near logic for high-throughput random bitstreams for probabilistic computing, statistical modeling, and cryptography. In terms of performance, sMTJs generally suit applications requiring very high data-rate random bits near logic processors, such as probabilistic computing or large-scale statistical modeling. Whereas SW-MTJs are attractive option for edge-oriented microcontrollers, providing entropy sources for computing or cryptographic enhancement. We highlight the strengths, limitations, and integration challenges of each approach, emphasizing the need to reduce device-to-device variability in sMTJs—particularly by mitigating magnetostriction-induced in-plane anisotropy—and to improve temporal stability in SW-MTJs for robust, large-scale deployment. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
Description
Abstract:We review two magnetic tunnel junction (MTJ) approaches for compact, low-power, CMOS-integrated true random number generation (TRNG). The first employs passive-read, easy-plane superparamagnetic MTJs (sMTJs) that generate thermal-fluctuation-driven bitstreams at 0.5–1 Gb s−1 per device. The second uses MTJs with magnetically stable free layers, operated with stochastic write pulses to achieve switching probabilities of about 0.5 (i.e. write error rates of ≃ 0.5 ), achieving ≳ 0.1 Gb s−1 per device; we refer to these as stochastic-write MTJs (SW-MTJs). Randomness from both approaches has been validated using the NIST SP 800-22r1a test suites. sMTJ approach uses a read-only cell with low power and can be compatible with most advanced CMOS nodes, while SW-MTJs leverage standard CMOS MTJ process flows, enabling co-integration with embedded spin-transfer torque magnetic random access memory. Both approaches can achieve deep sub-0.01 µ m2 MTJ footprints and offer orders-of-magnitude better energy efficiency than CPU/GPU-based generators, enabling placement near logic for high-throughput random bitstreams for probabilistic computing, statistical modeling, and cryptography. In terms of performance, sMTJs generally suit applications requiring very high data-rate random bits near logic processors, such as probabilistic computing or large-scale statistical modeling. Whereas SW-MTJs are attractive option for edge-oriented microcontrollers, providing entropy sources for computing or cryptographic enhancement. We highlight the strengths, limitations, and integration challenges of each approach, emphasizing the need to reduce device-to-device variability in sMTJs—particularly by mitigating magnetostriction-induced in-plane anisotropy—and to improve temporal stability in SW-MTJs for robust, large-scale deployment. [ABSTRACT FROM AUTHOR]
ISSN:00223727
DOI:10.1088/1361-6463/ae27da