Bibliographic Details
| Title: |
Impedance characteristics of lossy Bi1−xNdxFeO3 (x = 0.00–0.10) ceramics at elevated temperatures (280–380 °C) |
| Authors: |
Kumar, Sujeet1 (AUTHOR), Fahad, Mohd.1 (AUTHOR), Sarun, P. M.1 (AUTHOR) sarun@iitism.ac.in |
| Source: |
Journal of Materials Science: Materials in Electronics. Mar2026, Vol. 37 Issue 8, p1-24. 24p. |
| Abstract: |
Nd-substituted Bi 1 - x Nd x FeO 3 ceramics, ( x = 0.00 –0.10) were synthesized to investigate dielectric and impedance behavior at elevated temperatures (280–380 °C) in the frequency range of 100 Hz–1 MHz. The rhombohedral structure with space group of R3c is confirmed using XRD analysis, where the peak shifts toward higher (2 θ) angles (lattice contraction) confirms the successful Nd substitution in BiFeO 3 . Rietveld refinement reveals the reduction in the c-lattice parameter from 13.8776 Å ( x = 0.00 ) to 13.8011 Å ( x = 0.10 ), consistent with the observed cell volume shrinkage. FE-SEM analysis shows the grain size reduction (11.54−4.52 µm), confirming the grain growth inhibition due to Nd-doping. FTIR and Raman spectroscopy show structural changes, with shifts in Fe–O bond vibrations indicating enhanced symmetry and structural stability. XPS analysis confirms the stabilization of Fe 3 + states with an increased Fe 3 + /Fe 2 + ratio (1.56–1.68), linked to reduced oxygen-vacancy conduction. Frequency and temperature-dependent investigations show that the variation in dielectric properties is attributed to reduced oxygen vacancies. The maximum dielectric constant of ≈ 1300 at 380 °C with tan δ ≈ 335 at 100 Hz is obtained for the x = 0.08 sample. AC conductivity follows Jonscher’s law, with activation energies ranging from 1.08 to 1.93 eV. Impedance and modulus analysis confirm an increase in thermally activated charge carrier mobility and relaxation. Overall, the conduction mechanism is mainly dominated by the short-range mobility of thermally activated charge carriers, resulting in BiFeO 3 being lossy at low frequencies and elevated temperatures. [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |