Phase-Field Damage Modeling of Electromechanical Fracture in MEMS Piezoelectric Films.

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Title: Phase-Field Damage Modeling of Electromechanical Fracture in MEMS Piezoelectric Films.
Authors: Chen, Xuanyi1 (AUTHOR), Zhang, Yuhan2 (AUTHOR), Xue, Yu1,3 (AUTHOR), Shi, Yangjie1 (AUTHOR), Cheng, Jiaxing1,2,3 (AUTHOR) jiaxing@yzu.edu.cn
Source: Materials (1996-1944). Apr2026, Vol. 19 Issue 8, p1662. 21p.
Subjects: Crack propagation, Manufacturing defects, Piezoelectric thin films, Microelectromechanical systems, Fracture mechanics, Damage models, Brittle fractures, Computer simulation
Abstract: Highlights: A phase-field damage model is developed for crack propagation simulation in MEMS piezoelectric thin films under coupled electromechanical loading. The effects of electric potential, polarization angle, and pre-existing defects on the fracture behavior of MEMS devices are quantitatively investigated. The proposed model is numerically validated via ABAQUS UEL subroutines for predicting crack initiation and propagation in MEMS structures. The model enables accurate simulation of fracture evolution during the fabrication and service of MEMS piezoelectric thin-film devices. Piezoelectric thin films have been widely used in micro-electromechanical systems (MEMSs), such as sensors, actuators, and resonant devices. Electromechanically driven fractures can severely degrade device performance and reliability. In this work, a phase-field damage model is developed for MEMS piezoelectric thin films under coupled electromechanical loading, incorporating pre-existing defects via an equivalent local fracture toughness. Microcracks and micro-voids arising from manufacturing defects are integrated into the model through an effective local fracture toughness, enabling a unified description of their roles in crack initiation and propagation. The proposed model is implemented in ABAQUS by means of a user-defined element (UEL) subroutine and solved using a staggered scheme. Numerical results show that the level of pre-existing defects, the applied electric potential, and the polarization direction all exert significant effects on fracture behavior. As the defect parameter Dc increases from 0 to 0.10, the reaction force decreases from 87.8 N to 86.3 N, indicating reduced fracture resistance due to manufacturing-induced defects. In addition, the reaction force changes from 90.3 N at −500 V to 86.3 N at +500 V, while it decreases from 102.9 N to 87.1 N as the polarization angle β increases from 0° to 90°. These results demonstrate that pre-existing defects and electromechanical loading jointly govern crack evolution in MEMS piezoelectric thin films. The present study provides a useful numerical tool for fracture analysis, reliability assessment, and structural design of MEMS piezoelectric devices containing manufacturing defects. [ABSTRACT FROM AUTHOR]
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Abstract:Highlights: A phase-field damage model is developed for crack propagation simulation in MEMS piezoelectric thin films under coupled electromechanical loading. The effects of electric potential, polarization angle, and pre-existing defects on the fracture behavior of MEMS devices are quantitatively investigated. The proposed model is numerically validated via ABAQUS UEL subroutines for predicting crack initiation and propagation in MEMS structures. The model enables accurate simulation of fracture evolution during the fabrication and service of MEMS piezoelectric thin-film devices. Piezoelectric thin films have been widely used in micro-electromechanical systems (MEMSs), such as sensors, actuators, and resonant devices. Electromechanically driven fractures can severely degrade device performance and reliability. In this work, a phase-field damage model is developed for MEMS piezoelectric thin films under coupled electromechanical loading, incorporating pre-existing defects via an equivalent local fracture toughness. Microcracks and micro-voids arising from manufacturing defects are integrated into the model through an effective local fracture toughness, enabling a unified description of their roles in crack initiation and propagation. The proposed model is implemented in ABAQUS by means of a user-defined element (UEL) subroutine and solved using a staggered scheme. Numerical results show that the level of pre-existing defects, the applied electric potential, and the polarization direction all exert significant effects on fracture behavior. As the defect parameter Dc increases from 0 to 0.10, the reaction force decreases from 87.8 N to 86.3 N, indicating reduced fracture resistance due to manufacturing-induced defects. In addition, the reaction force changes from 90.3 N at −500 V to 86.3 N at +500 V, while it decreases from 102.9 N to 87.1 N as the polarization angle β increases from 0° to 90°. These results demonstrate that pre-existing defects and electromechanical loading jointly govern crack evolution in MEMS piezoelectric thin films. The present study provides a useful numerical tool for fracture analysis, reliability assessment, and structural design of MEMS piezoelectric devices containing manufacturing defects. [ABSTRACT FROM AUTHOR]
ISSN:19961944
DOI:10.3390/ma19081662