Performance Investigation of AlGaInP Light-Emitting Diodes.
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| Title: | Performance Investigation of AlGaInP Light-Emitting Diodes. |
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| Authors: | Sun, Weiwei1 (AUTHOR), Ge, Shaobo1 (AUTHOR) geshaobo@xatu.edu.cn, Li, Junyan1 (AUTHOR), Shen, Lujun1 (AUTHOR), Zhao, Xinyu1 (AUTHOR), Shi, Ronghua1 (AUTHOR), Zhang, Jin1 (AUTHOR), Xi, Yingxue1 (AUTHOR) |
| Source: | Nanomaterials (2079-4991). Apr2026, Vol. 16 Issue 8, p480. 10p. |
| Subjects: | Quantum wells, Strains & stresses (Mechanics), Lattice constants, Light emitting diodes, Indium compounds, Metal organic chemical vapor deposition, Quantum efficiency |
| Abstract: | Previous studies have shown that the external quantum efficiency (EQE) of conventional red Micro-Light emitting diodes(Micro-LEDs) decreases markedly with reducing chip size. This degradation is generally attributed to enhanced non-radiative recombination at sidewall defects, which leads to increased carrier loss in size-scaled LEDs. In this work, AlGaInP quaternary semiconductor epitaxial wafers incorporating multiple quantum wells (MQWs) with different well-layer strain states were grown by metal–organic chemical vapor deposition (MOCVD). Through wafer bonding, photolithography, etching, and metal evaporation, these epitaxial structures were fabricated into Micro-LED arrays with single-pixel pitches of 10, 20, 50, and 100 μm. The experimental results reveal that, with increasing indium (In) composition in the GaInP well layers—corresponding to a gradual increase in lattice mismatch (Δa/a) from 0% to 1%—smaller-sized Micro-LED arrays exhibit superior EQE performance. For devices with a pixel pitch of 10 μm, the EQE of Micro-LED arrays with a 1% lattice mismatch in the well layer is approximately three times higher than that of lattice-matched (0%) counterparts. In contrast, for devices with a pixel pitch of 100 μm, the EQE of lattice-matched (0%) Micro-LED arrays is about 1.3 times higher than that of devices with a 1% lattice mismatch. These results indicate that, to achieve maximum EQE in Micro-LEDs, the strain state of the MQW-layer material must be carefully considered as a priority factor. Optimal device performance requires appropriate matching between LED size and the well-layer growth strain. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | Previous studies have shown that the external quantum efficiency (EQE) of conventional red Micro-Light emitting diodes(Micro-LEDs) decreases markedly with reducing chip size. This degradation is generally attributed to enhanced non-radiative recombination at sidewall defects, which leads to increased carrier loss in size-scaled LEDs. In this work, AlGaInP quaternary semiconductor epitaxial wafers incorporating multiple quantum wells (MQWs) with different well-layer strain states were grown by metal–organic chemical vapor deposition (MOCVD). Through wafer bonding, photolithography, etching, and metal evaporation, these epitaxial structures were fabricated into Micro-LED arrays with single-pixel pitches of 10, 20, 50, and 100 μm. The experimental results reveal that, with increasing indium (In) composition in the GaInP well layers—corresponding to a gradual increase in lattice mismatch (Δa/a) from 0% to 1%—smaller-sized Micro-LED arrays exhibit superior EQE performance. For devices with a pixel pitch of 10 μm, the EQE of Micro-LED arrays with a 1% lattice mismatch in the well layer is approximately three times higher than that of lattice-matched (0%) counterparts. In contrast, for devices with a pixel pitch of 100 μm, the EQE of lattice-matched (0%) Micro-LED arrays is about 1.3 times higher than that of devices with a 1% lattice mismatch. These results indicate that, to achieve maximum EQE in Micro-LEDs, the strain state of the MQW-layer material must be carefully considered as a priority factor. Optimal device performance requires appropriate matching between LED size and the well-layer growth strain. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 20794991 |
| DOI: | 10.3390/nano16080480 |
