Bibliographic Details
| Title: |
Properties of low-temperature-grown InAs and their changes upon annealing |
| Authors: |
Shiba, M.1, Ikariyama, R.1, Takushima, M.1, Kajikawa, Y. kajikawa@riko.shimane-u.ac.jp |
| Source: |
Journal of Crystal Growth. Apr2007, Vol. 301-302, p256-259. 4p. |
| Subjects: |
Annealing of metals, Crystal growth, Electron probe microanalysis, Secondary ion mass spectrometry |
| Abstract: |
Abstract: InAs layers grown by molecular beam epitaxy at 150-350°C were characterized by electron probe microanalysis (EPMA), high resolution X-ray diffraction (HRXRD), Hall measurements, and secondary ion mass spectrometry (SIMS). EPMA revealed that the As mole fractions in the layers grown at 150–200°C are higher by about 0.5% than those in the layers grown at 300–350°C. HRXRD measurements revealed that the layers grown at 150–200°C have larger lattice spacings than the InAs substrate by about 0.02%. Hall measurements revealed that the free-electron concentration in the layer grown at 200°C is as high as 1.4×1019 cm−3 while such a high concentration of impurities cannot be detected by SIMS. Upon annealing at higher temperatures than 250°C, both the lattice spacing and the free-electron concentration of the layer grown at 200°C were observed to decrease. These phenomena can be reasonably attributed to antisite As. [Copyright &y& Elsevier] |
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| Database: |
Engineering Source |
