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Properties of low-temperature-grown InAs and their changes upon annealing

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Title: Properties of low-temperature-grown InAs and their changes upon annealing
Authors: Shiba, M.1, Ikariyama, R.1, Takushima, M.1, Kajikawa, Y. kajikawa@riko.shimane-u.ac.jp
Source: Journal of Crystal Growth. Apr2007, Vol. 301-302, p256-259. 4p.
Subjects: Annealing of metals, Crystal growth, Electron probe microanalysis, Secondary ion mass spectrometry
Abstract: Abstract: InAs layers grown by molecular beam epitaxy at 150-350°C were characterized by electron probe microanalysis (EPMA), high resolution X-ray diffraction (HRXRD), Hall measurements, and secondary ion mass spectrometry (SIMS). EPMA revealed that the As mole fractions in the layers grown at 150–200°C are higher by about 0.5% than those in the layers grown at 300–350°C. HRXRD measurements revealed that the layers grown at 150–200°C have larger lattice spacings than the InAs substrate by about 0.02%. Hall measurements revealed that the free-electron concentration in the layer grown at 200°C is as high as 1.4×1019 cm−3 while such a high concentration of impurities cannot be detected by SIMS. Upon annealing at higher temperatures than 250°C, both the lattice spacing and the free-electron concentration of the layer grown at 200°C were observed to decrease. These phenomena can be reasonably attributed to antisite As. [Copyright &y& Elsevier]
Copyright of Journal of Crystal Growth is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 24470067
AccessLevel: 6
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PubTypeId: academicJournal
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Properties of low-temperature-grown InAs and their changes upon annealing
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Shiba%2C+M%2E%22">Shiba, M.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Ikariyama%2C+R%2E%22">Ikariyama, R.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Takushima%2C+M%2E%22">Takushima, M.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Kajikawa%2C+Y%2E%22">Kajikawa, Y.</searchLink><i> kajikawa@riko.shimane-u.ac.jp</i>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Journal+of+Crystal+Growth%22">Journal of Crystal Growth</searchLink>. Apr2007, Vol. 301-302, p256-259. 4p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Annealing+of+metals%22">Annealing of metals</searchLink><br /><searchLink fieldCode="DE" term="%22Crystal+growth%22">Crystal growth</searchLink><br /><searchLink fieldCode="DE" term="%22Electron+probe+microanalysis%22">Electron probe microanalysis</searchLink><br /><searchLink fieldCode="DE" term="%22Secondary+ion+mass+spectrometry%22">Secondary ion mass spectrometry</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Abstract: InAs layers grown by molecular beam epitaxy at 150-350°C were characterized by electron probe microanalysis (EPMA), high resolution X-ray diffraction (HRXRD), Hall measurements, and secondary ion mass spectrometry (SIMS). EPMA revealed that the As mole fractions in the layers grown at 150–200°C are higher by about 0.5% than those in the layers grown at 300–350°C. HRXRD measurements revealed that the layers grown at 150–200°C have larger lattice spacings than the InAs substrate by about 0.02%. Hall measurements revealed that the free-electron concentration in the layer grown at 200°C is as high as 1.4×1019 cm−3 while such a high concentration of impurities cannot be detected by SIMS. Upon annealing at higher temperatures than 250°C, both the lattice spacing and the free-electron concentration of the layer grown at 200°C were observed to decrease. These phenomena can be reasonably attributed to antisite As. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Crystal Growth is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1016/j.jcrysgro.2006.11.140
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 4
        StartPage: 256
    Subjects:
      – SubjectFull: Annealing of metals
        Type: general
      – SubjectFull: Crystal growth
        Type: general
      – SubjectFull: Electron probe microanalysis
        Type: general
      – SubjectFull: Secondary ion mass spectrometry
        Type: general
    Titles:
      – TitleFull: Properties of low-temperature-grown InAs and their changes upon annealing
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Shiba, M.
      – PersonEntity:
          Name:
            NameFull: Ikariyama, R.
      – PersonEntity:
          Name:
            NameFull: Takushima, M.
      – PersonEntity:
          Name:
            NameFull: Kajikawa, Y.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 04
              Text: Apr2007
              Type: published
              Y: 2007
          Identifiers:
            – Type: issn-print
              Value: 00220248
          Numbering:
            – Type: volume
              Value: 301-302
          Titles:
            – TitleFull: Journal of Crystal Growth
              Type: main
ResultId 1