Bibliographic Details
| Title: |
Determination of Key Parameters for SEU Occurrence using 3-D Full Cell SRAM Simulations. |
| Authors: |
Roche, Ph., Palau, J.M. |
| Source: |
IEEE Transactions on Nuclear Science. Dec99 Part 1 of 4, Vol. 46 Issue 6, p1354. 9p. 2 Diagrams, 2 Charts, 7 Graphs. |
| Subjects: |
Random access memory, Complementary metal oxide semiconductors, Ions |
| Abstract: |
Presents information on a study which determined the key parameters for single event upset (SEU) occurrence using a three-dimensional (3-D) static random access memory (SRAM) cell. Simulation of a 3-D SRAM cell based on a current complementary metal-oxide semiconductor process; Investigation of ion-induced current. |
| Database: |
Engineering Source |
