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Determination of Key Parameters for SEU Occurrence using 3-D Full Cell SRAM Simulations.

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Bibliographic Details
Title: Determination of Key Parameters for SEU Occurrence using 3-D Full Cell SRAM Simulations.
Authors: Roche, Ph., Palau, J.M.
Source: IEEE Transactions on Nuclear Science. Dec99 Part 1 of 4, Vol. 46 Issue 6, p1354. 9p. 2 Diagrams, 2 Charts, 7 Graphs.
Subjects: Random access memory, Complementary metal oxide semiconductors, Ions
Abstract: Presents information on a study which determined the key parameters for single event upset (SEU) occurrence using a three-dimensional (3-D) static random access memory (SRAM) cell. Simulation of a 3-D SRAM cell based on a current complementary metal-oxide semiconductor process; Investigation of ion-induced current.
Database: Engineering Source
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  Availability: 0
Header DbId: egs
DbLabel: Engineering Source
An: 2802722
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Determination of Key Parameters for SEU Occurrence using 3-D Full Cell SRAM Simulations.
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  Data: <searchLink fieldCode="AR" term="%22Roche%2C+Ph%2E%22">Roche, Ph.</searchLink><br /><searchLink fieldCode="AR" term="%22Palau%2C+J%2EM%2E%22">Palau, J.M.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22IEEE+Transactions+on+Nuclear+Science%22">IEEE Transactions on Nuclear Science</searchLink>. Dec99 Part 1 of 4, Vol. 46 Issue 6, p1354. 9p. 2 Diagrams, 2 Charts, 7 Graphs.
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  Data: <searchLink fieldCode="DE" term="%22Random+access+memory%22">Random access memory</searchLink><br /><searchLink fieldCode="DE" term="%22Complementary+metal+oxide+semiconductors%22">Complementary metal oxide semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Ions%22">Ions</searchLink>
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  Label: Abstract
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  Data: Presents information on a study which determined the key parameters for single event upset (SEU) occurrence using a three-dimensional (3-D) static random access memory (SRAM) cell. Simulation of a 3-D SRAM cell based on a current complementary metal-oxide semiconductor process; Investigation of ion-induced current.
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=2802722
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        Value: 10.1109/23.819093
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      – Code: eng
        Text: English
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        PageCount: 9
        StartPage: 1354
    Subjects:
      – SubjectFull: Random access memory
        Type: general
      – SubjectFull: Complementary metal oxide semiconductors
        Type: general
      – SubjectFull: Ions
        Type: general
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      – TitleFull: Determination of Key Parameters for SEU Occurrence using 3-D Full Cell SRAM Simulations.
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            NameFull: Roche, Ph.
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              M: 12
              Text: Dec99 Part 1 of 4
              Type: published
              Y: 1999
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              Value: 46
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