Bibliographic Details
| Title: |
Optical and excitonic properties of ZnO films |
| Authors: |
Mihailovic, M.1 Martine.MIHAILOVIC@univ-bpclermont.fr, Henneghien, A.-L.1, Faure, S.2, Disseix, P.1, Leymarie, J.1, Vasson, A.1, Buell, D.A.3, Semond, F.3, Morhain, C.3, Zùñiga Pérez, J.3 |
| Source: |
Optical Materials. Jan2009, Vol. 31 Issue 3, p532-536. 5p. |
| Subjects: |
Optical properties, Thin films, Electric properties of thin films, Zinc oxide thin films, Gallium nitride, Ellipsometry, Molecular beam epitaxy, Substrates (Materials science), Dielectrics |
| Abstract: |
Abstract: Optical and excitonic properties of ZnO heterostructures are studied in order to observe the strong light-matter coupling in this material as it has been recently demonstrated in GaN. The optical index of ZnO is first studied as a function of wavelength through spectroscopic ellipsometric and reflectivity experiments on ZnO layers grown by molecular beam epitaxy and deposited on two different substrates: sapphire and silicon with an AlN buffer layer. The main features of the excitons: energy, oscillator strength and broadening are deduced. From the knowledge of these properties, a microcavity is then designed. The ZnO active layer is embedded between AlGaN/AlN and dielectric Bragg mirrors. The calculation of the reflectivity spectra as a function of the incident angle attests the strong coupling and a large Rabi splitting of 110meV is expected in such a cavity. [Copyright &y& Elsevier] |
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| Database: |
Engineering Source |
