Bibliographic Details
| Title: |
Quantum wells based on Si/SiO x stacks for nanostructured absorbers |
| Authors: |
Berghoff, B.1 berghoff@iht.rwth-aachen.de, Suckow, S.1, Rölver, R.1, Spangenberg, B.1, Kurz, H.1, Sologubenko, A.2,3, Mayer, J.2,3 |
| Source: |
Solar Energy Materials & Solar Cells. Nov2010, Vol. 94 Issue 11, p1893-1896. 4p. |
| Subjects: |
Silicon solar cells, Photoluminescence, Nanosilicon, Nanostructures, Silicon oxide, Charge exchange, Quantum wells, Electric properties of silicon crystals |
| Abstract: |
Abstract: We report on electrical transport and quantum confinement in thermally annealed Si/SiO x multiple quantum well (QW) stacks. Results are correlated with the morphology of the stacks. High temperature annealing of Si/SiO x stacks leads to precipitation of excess Si from the SiO x layers, which enhances the degree of crystallization and increases the grain sizes in the Si QWs compared to the conventional Si/SiO2 system. Moreover, the excess Si forms highly conductive pathways between adjacent Si QWs that are separated by ultrathin silicon oxide barriers. This results in an increase of conductivity by up to 10 orders of magnitude compared to the tunneling dominated transport in Si/SiO2 stacks. The stacks exhibit a distinct quantum confinement as confirmed by photoluminescence measurements. [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |
