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Quantum wells based on Si/SiO x stacks for nanostructured absorbers

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Title: Quantum wells based on Si/SiO x stacks for nanostructured absorbers
Authors: Berghoff, B.1 berghoff@iht.rwth-aachen.de, Suckow, S.1, Rölver, R.1, Spangenberg, B.1, Kurz, H.1, Sologubenko, A.2,3, Mayer, J.2,3
Source: Solar Energy Materials & Solar Cells. Nov2010, Vol. 94 Issue 11, p1893-1896. 4p.
Subjects: Silicon solar cells, Photoluminescence, Nanosilicon, Nanostructures, Silicon oxide, Charge exchange, Quantum wells, Electric properties of silicon crystals
Abstract: Abstract: We report on electrical transport and quantum confinement in thermally annealed Si/SiO x multiple quantum well (QW) stacks. Results are correlated with the morphology of the stacks. High temperature annealing of Si/SiO x stacks leads to precipitation of excess Si from the SiO x layers, which enhances the degree of crystallization and increases the grain sizes in the Si QWs compared to the conventional Si/SiO2 system. Moreover, the excess Si forms highly conductive pathways between adjacent Si QWs that are separated by ultrathin silicon oxide barriers. This results in an increase of conductivity by up to 10 orders of magnitude compared to the tunneling dominated transport in Si/SiO2 stacks. The stacks exhibit a distinct quantum confinement as confirmed by photoluminescence measurements. [ABSTRACT FROM AUTHOR]
Copyright of Solar Energy Materials & Solar Cells is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 53969784
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Quantum wells based on Si/SiO<subscript> x </subscript> stacks for nanostructured absorbers
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  Data: <searchLink fieldCode="JN" term="%22Solar+Energy+Materials+%26+Solar+Cells%22">Solar Energy Materials & Solar Cells</searchLink>. Nov2010, Vol. 94 Issue 11, p1893-1896. 4p.
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  Data: <searchLink fieldCode="DE" term="%22Silicon+solar+cells%22">Silicon solar cells</searchLink><br /><searchLink fieldCode="DE" term="%22Photoluminescence%22">Photoluminescence</searchLink><br /><searchLink fieldCode="DE" term="%22Nanosilicon%22">Nanosilicon</searchLink><br /><searchLink fieldCode="DE" term="%22Nanostructures%22">Nanostructures</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon+oxide%22">Silicon oxide</searchLink><br /><searchLink fieldCode="DE" term="%22Charge+exchange%22">Charge exchange</searchLink><br /><searchLink fieldCode="DE" term="%22Quantum+wells%22">Quantum wells</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+properties+of+silicon+crystals%22">Electric properties of silicon crystals</searchLink>
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  Data: Abstract: We report on electrical transport and quantum confinement in thermally annealed Si/SiO x multiple quantum well (QW) stacks. Results are correlated with the morphology of the stacks. High temperature annealing of Si/SiO x stacks leads to precipitation of excess Si from the SiO x layers, which enhances the degree of crystallization and increases the grain sizes in the Si QWs compared to the conventional Si/SiO2 system. Moreover, the excess Si forms highly conductive pathways between adjacent Si QWs that are separated by ultrathin silicon oxide barriers. This results in an increase of conductivity by up to 10 orders of magnitude compared to the tunneling dominated transport in Si/SiO2 stacks. The stacks exhibit a distinct quantum confinement as confirmed by photoluminescence measurements. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
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  Data: <i>Copyright of Solar Energy Materials & Solar Cells is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1016/j.solmat.2010.06.033
    Languages:
      – Code: eng
        Text: English
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      Pagination:
        PageCount: 4
        StartPage: 1893
    Subjects:
      – SubjectFull: Silicon solar cells
        Type: general
      – SubjectFull: Photoluminescence
        Type: general
      – SubjectFull: Nanosilicon
        Type: general
      – SubjectFull: Nanostructures
        Type: general
      – SubjectFull: Silicon oxide
        Type: general
      – SubjectFull: Charge exchange
        Type: general
      – SubjectFull: Quantum wells
        Type: general
      – SubjectFull: Electric properties of silicon crystals
        Type: general
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      – TitleFull: Quantum wells based on Si/SiO x stacks for nanostructured absorbers
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              M: 11
              Text: Nov2010
              Type: published
              Y: 2010
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