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Chip-Level Warp Control of SOI 3-Axis Accelerometer with the Zigzag-Shaped Z-Electrode

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Bibliographic Details
Title: Chip-Level Warp Control of SOI 3-Axis Accelerometer with the Zigzag-Shaped Z-Electrode
Authors: Nonomura, Y.1, Omura, Y.1, Funabashi, H.1, Akashi, T.1, Fujiyoshi, M.1, Hata, Y.1, Nakayama, T.2, Esashi, M.3 nonomura@mosk.tytlabs.co.jp
Source: Procedia Engineering. Dec2012, Vol. 47, p546-549. 4p.
Subjects: Integrated circuits, Silicon-on-insulator technology, Accelerometers, Electrodes, Motion control devices, Automobiles, Robot motion, Capacitors
Abstract: Abstract: We developed a fully-differential 3-axis accelerometer with a Zigzag-Shaped Z-electrode (ZSZ) for motion controls of automobiles and robots. The ZSZ structure is composed of only two silicon layers of an SOI (Silicon-on-Insulator) wafer. The ZSZ structure consists of two kinds of capacitors in a Z-axis direction. The gaps of the capacitors were designed to be same and the sensor detected a capacitance change precisely. However, small gap differences at the capacitors in the Z-axis direction were appeared and it caused unequal sensitivities. This was because the fabricated sensor chip was warped. To overcome this drawback, we have proposed a novel method for chip-level warp control. The warp control is performed by forming a SiO2 frame on a backside of the chip. The frame works as a stress compensator of thermal expansion. The chip-level warp control demonstrated that gaps of the ZSZ were controlled to be equal and the sensor characteristics were also improved. The chip-level warp control is useful for sensors and actuators, which are sensitive to deformation in the Z-direction. [Copyright &y& Elsevier]
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Database: Engineering Source
Description
Abstract:Abstract: We developed a fully-differential 3-axis accelerometer with a Zigzag-Shaped Z-electrode (ZSZ) for motion controls of automobiles and robots. The ZSZ structure is composed of only two silicon layers of an SOI (Silicon-on-Insulator) wafer. The ZSZ structure consists of two kinds of capacitors in a Z-axis direction. The gaps of the capacitors were designed to be same and the sensor detected a capacitance change precisely. However, small gap differences at the capacitors in the Z-axis direction were appeared and it caused unequal sensitivities. This was because the fabricated sensor chip was warped. To overcome this drawback, we have proposed a novel method for chip-level warp control. The warp control is performed by forming a SiO2 frame on a backside of the chip. The frame works as a stress compensator of thermal expansion. The chip-level warp control demonstrated that gaps of the ZSZ were controlled to be equal and the sensor characteristics were also improved. The chip-level warp control is useful for sensors and actuators, which are sensitive to deformation in the Z-direction. [Copyright &y& Elsevier]
ISSN:18777058
DOI:10.1016/j.proeng.2012.09.205