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Role of Joule Heating on Current Saturation and Transient Behavior of Graphene Transistors.

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Title: Role of Joule Heating on Current Saturation and Transient Behavior of Graphene Transistors.
Authors: Islam, Sharnali1, Li, Zuanyi2, Dorgan, Vincent E.1, Bae, Myung-Ho1, Pop, Eric1
Source: IEEE Electron Device Letters. Feb2013, Vol. 34 Issue 2, p166-168. 3p.
Subjects: Field-effect transistors, Graphene, Resistance heating, Electric transients, Thermal resistance, Silicon
Abstract: We use simulations to examine current saturation in sub-micron graphene transistors on \SiO2/\Si. We find that self-heating is partly responsible for current saturation (lower output conductance) but degrades current densities above \1\ \mA/\mu\m by up to 15%. Heating effects are reduced if the supporting insulator is thinned or, in shorter channel devices, by partial heat sinking at the contacts. The transient behavior of such devices has thermal time constants of \sim30–300 ns, which is dominated by the thickness of the supporting insulator and that of the device capping layers (a behavior also expected in ultrathin-body SOI transistors). The results shed important physical insight into the high-field and transient behavior of graphene transistors. [ABSTRACT FROM AUTHOR]
Copyright of IEEE Electron Device Letters is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Role of Joule Heating on Current Saturation and Transient Behavior of Graphene Transistors.
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  Data: <searchLink fieldCode="JN" term="%22IEEE+Electron+Device+Letters%22">IEEE Electron Device Letters</searchLink>. Feb2013, Vol. 34 Issue 2, p166-168. 3p.
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  Data: <searchLink fieldCode="DE" term="%22Field-effect+transistors%22">Field-effect transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Graphene%22">Graphene</searchLink><br /><searchLink fieldCode="DE" term="%22Resistance+heating%22">Resistance heating</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+transients%22">Electric transients</searchLink><br /><searchLink fieldCode="DE" term="%22Thermal+resistance%22">Thermal resistance</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon%22">Silicon</searchLink>
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  Data: We use simulations to examine current saturation in sub-micron graphene transistors on \SiO2/\Si. We find that self-heating is partly responsible for current saturation (lower output conductance) but degrades current densities above \1\ \mA/\mu\m by up to 15%. Heating effects are reduced if the supporting insulator is thinned or, in shorter channel devices, by partial heat sinking at the contacts. The transient behavior of such devices has thermal time constants of \sim30–300 ns, which is dominated by the thickness of the supporting insulator and that of the device capping layers (a behavior also expected in ultrathin-body SOI transistors). The results shed important physical insight into the high-field and transient behavior of graphene transistors. [ABSTRACT FROM AUTHOR]
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  Group: Ab
  Data: <i>Copyright of IEEE Electron Device Letters is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1109/LED.2012.2230393
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        Text: English
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        Type: general
      – SubjectFull: Graphene
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      – SubjectFull: Resistance heating
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      – SubjectFull: Electric transients
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      – SubjectFull: Thermal resistance
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      – SubjectFull: Silicon
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      – TitleFull: Role of Joule Heating on Current Saturation and Transient Behavior of Graphene Transistors.
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            NameFull: Islam, Sharnali
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            NameFull: Dorgan, Vincent E.
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            NameFull: Bae, Myung-Ho
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            NameFull: Pop, Eric
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              Text: Feb2013
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