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Site-controlled growth of single GaN quantum dots in nanowires by MOCVD

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Title: Site-controlled growth of single GaN quantum dots in nanowires by MOCVD
Authors: Choi, Kihyun1 kh-choi@iis.u-tokyo.ac.jp, Arita, Munetaka2, Kako, Satoshi1, Arakawa, Yasuhiko1,2
Source: Journal of Crystal Growth. May2013, Vol. 370, p328-331. 4p.
Subjects: Gallium nitride, Quantum dots, Nanowires, Crystal growth, Metal organic chemical vapor deposition, Crystal structure
Abstract: Abstract: We report the metalorganic chemical vapor deposition growth of site-controlled single GaN quantum dots (QDs) in nanowires. The structure design has been optimized to maximize the luminescence intensity. First we have investigated the effect of the growth template on the sapphire (0001) substrate. It is found that even when the nanowire growth is performed on high defect density AlN, no degradation of the QD emission is observed (when compared to those dots grown on thick, higher quality GaN templates). As a consequence, the signal-to-noise ratio of the GaN QD emission could be improved by using the AlN templates, which exhibit a less intense background emission. Additionally, we have investigated the effect of the surface morphology of the underlying Al(Ga)N shell layers on the optical properties of the structures. When employing an AlGaN shell with smooth surface morphology, sharp single luminescence peaks from the QDs are clearly observed at around 4.2eV. [Copyright &y& Elsevier]
Copyright of Journal of Crystal Growth is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 86924971
AccessLevel: 6
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PubTypeId: academicJournal
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Site-controlled growth of single GaN quantum dots in nanowires by MOCVD
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  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Choi%2C+Kihyun%22">Choi, Kihyun</searchLink><relatesTo>1</relatesTo><i> kh-choi@iis.u-tokyo.ac.jp</i><br /><searchLink fieldCode="AR" term="%22Arita%2C+Munetaka%22">Arita, Munetaka</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Kako%2C+Satoshi%22">Kako, Satoshi</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Arakawa%2C+Yasuhiko%22">Arakawa, Yasuhiko</searchLink><relatesTo>1,2</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Crystal+Growth%22">Journal of Crystal Growth</searchLink>. May2013, Vol. 370, p328-331. 4p.
– Name: Subject
  Label: Subjects
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  Data: <searchLink fieldCode="DE" term="%22Gallium+nitride%22">Gallium nitride</searchLink><br /><searchLink fieldCode="DE" term="%22Quantum+dots%22">Quantum dots</searchLink><br /><searchLink fieldCode="DE" term="%22Nanowires%22">Nanowires</searchLink><br /><searchLink fieldCode="DE" term="%22Crystal+growth%22">Crystal growth</searchLink><br /><searchLink fieldCode="DE" term="%22Metal+organic+chemical+vapor+deposition%22">Metal organic chemical vapor deposition</searchLink><br /><searchLink fieldCode="DE" term="%22Crystal+structure%22">Crystal structure</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Abstract: We report the metalorganic chemical vapor deposition growth of site-controlled single GaN quantum dots (QDs) in nanowires. The structure design has been optimized to maximize the luminescence intensity. First we have investigated the effect of the growth template on the sapphire (0001) substrate. It is found that even when the nanowire growth is performed on high defect density AlN, no degradation of the QD emission is observed (when compared to those dots grown on thick, higher quality GaN templates). As a consequence, the signal-to-noise ratio of the GaN QD emission could be improved by using the AlN templates, which exhibit a less intense background emission. Additionally, we have investigated the effect of the surface morphology of the underlying Al(Ga)N shell layers on the optical properties of the structures. When employing an AlGaN shell with smooth surface morphology, sharp single luminescence peaks from the QDs are clearly observed at around 4.2eV. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Crystal Growth is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1016/j.jcrysgro.2012.09.019
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 4
        StartPage: 328
    Subjects:
      – SubjectFull: Gallium nitride
        Type: general
      – SubjectFull: Quantum dots
        Type: general
      – SubjectFull: Nanowires
        Type: general
      – SubjectFull: Crystal growth
        Type: general
      – SubjectFull: Metal organic chemical vapor deposition
        Type: general
      – SubjectFull: Crystal structure
        Type: general
    Titles:
      – TitleFull: Site-controlled growth of single GaN quantum dots in nanowires by MOCVD
        Type: main
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            NameFull: Choi, Kihyun
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            NameFull: Arita, Munetaka
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            NameFull: Kako, Satoshi
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            NameFull: Arakawa, Yasuhiko
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          Dates:
            – D: 01
              M: 05
              Text: May2013
              Type: published
              Y: 2013
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              Value: 00220248
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            – Type: volume
              Value: 370
          Titles:
            – TitleFull: Journal of Crystal Growth
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