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Improved SPICE electrical model of silicon photomultipliers.

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Title: Improved SPICE electrical model of silicon photomultipliers.
Authors: Marano, D.1 davide.marano@oact.inaf.it, Bonanno, G.1, Belluso, M.1, Billotta, S.1, Grillo, A.1, Garozzo, S.1, Romeo, G.1, Catalano, O.2, La Rosa, G.2, Sottile, G.2, Impiombato, D.2, Giarrusso, S.2
Source: Nuclear Instruments & Methods in Physics Research Section A. Oct2013, Vol. 726, p1-7. 7p.
Subjects: Photomultipliers, Silicon, Simulation Program with Integrated Circuit Emphasis, Signal processing, Photodiodes, Engineering instruments
Abstract: Abstract: The present work introduces an improved SPICE equivalent electrical model of silicon photomultiplier (SiPM) detectors, in order to simulate and predict their transient response to avalanche triggering events. In particular, the developed circuit model provides a careful investigation of the magnitude and timing of the read-out signals and can therefore be exploited to perform reliable circuit-level simulations. The adopted modeling approach is strictly related to the physics of each basic microcell constituting the SiPM device, and allows the avalanche timing as well as the photodiode current and voltage to be accurately simulated. Predictive capabilities of the proposed model are demonstrated by means of experimental measurements on a real SiPM detector. Simulated and measured pulses are found to be in good agreement with the expected results. [Copyright &y& Elsevier]
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Database: Engineering Source
Description
Abstract:Abstract: The present work introduces an improved SPICE equivalent electrical model of silicon photomultiplier (SiPM) detectors, in order to simulate and predict their transient response to avalanche triggering events. In particular, the developed circuit model provides a careful investigation of the magnitude and timing of the read-out signals and can therefore be exploited to perform reliable circuit-level simulations. The adopted modeling approach is strictly related to the physics of each basic microcell constituting the SiPM device, and allows the avalanche timing as well as the photodiode current and voltage to be accurately simulated. Predictive capabilities of the proposed model are demonstrated by means of experimental measurements on a real SiPM detector. Simulated and measured pulses are found to be in good agreement with the expected results. [Copyright &y& Elsevier]
ISSN:01689002
DOI:10.1016/j.nima.2013.05.127