Bibliographic Details
| Title: |
Large spin-accumulation signal in Si for epitaxial CoFe/highly (100)-textured MgO/Si devices. |
| Authors: |
Sugiyama, H.1 hideyuki.sugiyama@toshiba.co.jp, Ishikawa, M.1, Inokuchi, T.1, Tanamoto, T.1, Saito, Y.1, Tezuka, N.2 |
| Source: |
Solid State Communications. Jul2014, Vol. 190, p49-52. 4p. |
| Subjects: |
Cobalt compounds, Silicon, Signals & signaling, Epitaxy, Crystal texture, Metals, Magnesium oxide |
| Abstract: |
Abstract: Spin-accumulation in Si for epitaxial CoFe/highly (100)-textured MgO/Si devices is investigated and compared to that for CoFe/polycrystalline or (110)-textured MgO/Si devices. We find that magnesium (Mg) insertion between MgO and Si leads to highly (100)-textured MgO and epitaxial CoFe films. Interface resistance dependence on magnitude of spin-accumulation signal by the three-terminal Hanle measurement is quantitatively evaluated. Devices with highly (100)-textured MgO show larger magnitude of spin-accumulation signal in the low-interface-resistance region, than that with polycrystalline or (110)-textured MgO. These results indicate that magnitude of spin-accumulation signal depends on the crystallinity or the texture of ferromagnet/tunnel barrier layers on Si. [Copyright &y& Elsevier] |
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| Database: |
Engineering Source |
