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Large spin-accumulation signal in Si for epitaxial CoFe/highly (100)-textured MgO/Si devices.

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Title: Large spin-accumulation signal in Si for epitaxial CoFe/highly (100)-textured MgO/Si devices.
Authors: Sugiyama, H.1 hideyuki.sugiyama@toshiba.co.jp, Ishikawa, M.1, Inokuchi, T.1, Tanamoto, T.1, Saito, Y.1, Tezuka, N.2
Source: Solid State Communications. Jul2014, Vol. 190, p49-52. 4p.
Subjects: Cobalt compounds, Silicon, Signals & signaling, Epitaxy, Crystal texture, Metals, Magnesium oxide
Abstract: Abstract: Spin-accumulation in Si for epitaxial CoFe/highly (100)-textured MgO/Si devices is investigated and compared to that for CoFe/polycrystalline or (110)-textured MgO/Si devices. We find that magnesium (Mg) insertion between MgO and Si leads to highly (100)-textured MgO and epitaxial CoFe films. Interface resistance dependence on magnitude of spin-accumulation signal by the three-terminal Hanle measurement is quantitatively evaluated. Devices with highly (100)-textured MgO show larger magnitude of spin-accumulation signal in the low-interface-resistance region, than that with polycrystalline or (110)-textured MgO. These results indicate that magnitude of spin-accumulation signal depends on the crystallinity or the texture of ferromagnet/tunnel barrier layers on Si. [Copyright &y& Elsevier]
Copyright of Solid State Communications is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 96348352
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Large spin-accumulation signal in Si for epitaxial CoFe/highly (100)-textured MgO/Si devices.
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  Data: <searchLink fieldCode="JN" term="%22Solid+State+Communications%22">Solid State Communications</searchLink>. Jul2014, Vol. 190, p49-52. 4p.
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  Data: <searchLink fieldCode="DE" term="%22Cobalt+compounds%22">Cobalt compounds</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon%22">Silicon</searchLink><br /><searchLink fieldCode="DE" term="%22Signals+%26+signaling%22">Signals & signaling</searchLink><br /><searchLink fieldCode="DE" term="%22Epitaxy%22">Epitaxy</searchLink><br /><searchLink fieldCode="DE" term="%22Crystal+texture%22">Crystal texture</searchLink><br /><searchLink fieldCode="DE" term="%22Metals%22">Metals</searchLink><br /><searchLink fieldCode="DE" term="%22Magnesium+oxide%22">Magnesium oxide</searchLink>
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  Data: Abstract: Spin-accumulation in Si for epitaxial CoFe/highly (100)-textured MgO/Si devices is investigated and compared to that for CoFe/polycrystalline or (110)-textured MgO/Si devices. We find that magnesium (Mg) insertion between MgO and Si leads to highly (100)-textured MgO and epitaxial CoFe films. Interface resistance dependence on magnitude of spin-accumulation signal by the three-terminal Hanle measurement is quantitatively evaluated. Devices with highly (100)-textured MgO show larger magnitude of spin-accumulation signal in the low-interface-resistance region, than that with polycrystalline or (110)-textured MgO. These results indicate that magnitude of spin-accumulation signal depends on the crystallinity or the texture of ferromagnet/tunnel barrier layers on Si. [Copyright &y& Elsevier]
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  Group: Ab
  Data: <i>Copyright of Solid State Communications is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1016/j.ssc.2014.03.019
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        Text: English
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      – SubjectFull: Cobalt compounds
        Type: general
      – SubjectFull: Silicon
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      – SubjectFull: Signals & signaling
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      – SubjectFull: Epitaxy
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      – SubjectFull: Crystal texture
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      – SubjectFull: Magnesium oxide
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      – TitleFull: Large spin-accumulation signal in Si for epitaxial CoFe/highly (100)-textured MgO/Si devices.
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              Text: Jul2014
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