View in EDS

Growth, structural and optoelectronic properties tuning of nitrogen-doped ZnO thin films synthesized by means of reactive pulsed laser deposition.

Saved in:
Bibliographic Details
Title: Growth, structural and optoelectronic properties tuning of nitrogen-doped ZnO thin films synthesized by means of reactive pulsed laser deposition.
Authors: Naouar, M.1,2, Ka, I.1, Gaidi, M.3 mkaidi@sharjah.ac.ae, Alawadhi, H.3, Bessais, B.2, Khakani, M. A. El1 elkhakani@emt.inrs.ca
Source: Materials Research Bulletin. Sep2014, Vol. 57, p47-51. 5p.
Subjects: Zinc oxide thin films, Optoelectronics, Nitrogen, Pulsed laser deposition, Crystal growth, Crystal structure
Abstract: Pulsed laser deposition has been successfully used to achieve in-situ nitrogen doping of zinc oxide thin films at a temperature as low as 300°C. Nitrogen-doped zinc oxide (ZnO:N) thin films with a maximum nitrogen content of 0.7at.% were obtained by varying the nitrogen background pressure in the range of 0-150mTorr. The ZnO:N thin films were found to present hexagonal crystalline structure with dense and smooth surface. X-ray photoelectron spectroscopy analysis confirms the effective incorporation of nitrogen into ZnO thin films. Optical transmission together with room temperature photoluminescence measurements show that the band gap of the ZnO:N films shifts from 3.3eV to 3.1eV as nitrogen concentration varies in the range of 0.2-0.7at.%. The narrower band gap is obtained at an optimal nitrogen concentration of 0.22at.%. This band gap narrowing is found to be caused by both nitrogen incorporation and nitrogen-induced defects in the ZnO:N films. [ABSTRACT FROM AUTHOR]
Copyright of Materials Research Bulletin is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
Description
Abstract:Pulsed laser deposition has been successfully used to achieve in-situ nitrogen doping of zinc oxide thin films at a temperature as low as 300°C. Nitrogen-doped zinc oxide (ZnO:N) thin films with a maximum nitrogen content of 0.7at.% were obtained by varying the nitrogen background pressure in the range of 0-150mTorr. The ZnO:N thin films were found to present hexagonal crystalline structure with dense and smooth surface. X-ray photoelectron spectroscopy analysis confirms the effective incorporation of nitrogen into ZnO thin films. Optical transmission together with room temperature photoluminescence measurements show that the band gap of the ZnO:N films shifts from 3.3eV to 3.1eV as nitrogen concentration varies in the range of 0.2-0.7at.%. The narrower band gap is obtained at an optimal nitrogen concentration of 0.22at.%. This band gap narrowing is found to be caused by both nitrogen incorporation and nitrogen-induced defects in the ZnO:N films. [ABSTRACT FROM AUTHOR]
ISSN:00255408
DOI:10.1016/j.materresbull.2014.05.020