View in EDS

Growth, structural and optoelectronic properties tuning of nitrogen-doped ZnO thin films synthesized by means of reactive pulsed laser deposition.

Saved in:
Bibliographic Details
Title: Growth, structural and optoelectronic properties tuning of nitrogen-doped ZnO thin films synthesized by means of reactive pulsed laser deposition.
Authors: Naouar, M.1,2, Ka, I.1, Gaidi, M.3 mkaidi@sharjah.ac.ae, Alawadhi, H.3, Bessais, B.2, Khakani, M. A. El1 elkhakani@emt.inrs.ca
Source: Materials Research Bulletin. Sep2014, Vol. 57, p47-51. 5p.
Subjects: Zinc oxide thin films, Optoelectronics, Nitrogen, Pulsed laser deposition, Crystal growth, Crystal structure
Abstract: Pulsed laser deposition has been successfully used to achieve in-situ nitrogen doping of zinc oxide thin films at a temperature as low as 300°C. Nitrogen-doped zinc oxide (ZnO:N) thin films with a maximum nitrogen content of 0.7at.% were obtained by varying the nitrogen background pressure in the range of 0-150mTorr. The ZnO:N thin films were found to present hexagonal crystalline structure with dense and smooth surface. X-ray photoelectron spectroscopy analysis confirms the effective incorporation of nitrogen into ZnO thin films. Optical transmission together with room temperature photoluminescence measurements show that the band gap of the ZnO:N films shifts from 3.3eV to 3.1eV as nitrogen concentration varies in the range of 0.2-0.7at.%. The narrower band gap is obtained at an optimal nitrogen concentration of 0.22at.%. This band gap narrowing is found to be caused by both nitrogen incorporation and nitrogen-induced defects in the ZnO:N films. [ABSTRACT FROM AUTHOR]
Copyright of Materials Research Bulletin is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
FullText Text:
  Availability: 0
Header DbId: egs
DbLabel: Engineering Source
An: 97100738
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Growth, structural and optoelectronic properties tuning of nitrogen-doped ZnO thin films synthesized by means of reactive pulsed laser deposition.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Naouar%2C+M%2E%22">Naouar, M.</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AR" term="%22Ka%2C+I%2E%22">Ka, I.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Gaidi%2C+M%2E%22">Gaidi, M.</searchLink><relatesTo>3</relatesTo><i> mkaidi@sharjah.ac.ae</i><br /><searchLink fieldCode="AR" term="%22Alawadhi%2C+H%2E%22">Alawadhi, H.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Bessais%2C+B%2E%22">Bessais, B.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Khakani%2C+M%2E+A%2E+El%22">Khakani, M. A. El</searchLink><relatesTo>1</relatesTo><i> elkhakani@emt.inrs.ca</i>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Materials+Research+Bulletin%22">Materials Research Bulletin</searchLink>. Sep2014, Vol. 57, p47-51. 5p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Zinc+oxide+thin+films%22">Zinc oxide thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Optoelectronics%22">Optoelectronics</searchLink><br /><searchLink fieldCode="DE" term="%22Nitrogen%22">Nitrogen</searchLink><br /><searchLink fieldCode="DE" term="%22Pulsed+laser+deposition%22">Pulsed laser deposition</searchLink><br /><searchLink fieldCode="DE" term="%22Crystal+growth%22">Crystal growth</searchLink><br /><searchLink fieldCode="DE" term="%22Crystal+structure%22">Crystal structure</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Pulsed laser deposition has been successfully used to achieve in-situ nitrogen doping of zinc oxide thin films at a temperature as low as 300°C. Nitrogen-doped zinc oxide (ZnO:N) thin films with a maximum nitrogen content of 0.7at.% were obtained by varying the nitrogen background pressure in the range of 0-150mTorr. The ZnO:N thin films were found to present hexagonal crystalline structure with dense and smooth surface. X-ray photoelectron spectroscopy analysis confirms the effective incorporation of nitrogen into ZnO thin films. Optical transmission together with room temperature photoluminescence measurements show that the band gap of the ZnO:N films shifts from 3.3eV to 3.1eV as nitrogen concentration varies in the range of 0.2-0.7at.%. The narrower band gap is obtained at an optimal nitrogen concentration of 0.22at.%. This band gap narrowing is found to be caused by both nitrogen incorporation and nitrogen-induced defects in the ZnO:N films. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Materials Research Bulletin is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=97100738
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1016/j.materresbull.2014.05.020
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 5
        StartPage: 47
    Subjects:
      – SubjectFull: Zinc oxide thin films
        Type: general
      – SubjectFull: Optoelectronics
        Type: general
      – SubjectFull: Nitrogen
        Type: general
      – SubjectFull: Pulsed laser deposition
        Type: general
      – SubjectFull: Crystal growth
        Type: general
      – SubjectFull: Crystal structure
        Type: general
    Titles:
      – TitleFull: Growth, structural and optoelectronic properties tuning of nitrogen-doped ZnO thin films synthesized by means of reactive pulsed laser deposition.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Naouar, M.
      – PersonEntity:
          Name:
            NameFull: Ka, I.
      – PersonEntity:
          Name:
            NameFull: Gaidi, M.
      – PersonEntity:
          Name:
            NameFull: Alawadhi, H.
      – PersonEntity:
          Name:
            NameFull: Bessais, B.
      – PersonEntity:
          Name:
            NameFull: Khakani, M. A. El
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 09
              Text: Sep2014
              Type: published
              Y: 2014
          Identifiers:
            – Type: issn-print
              Value: 00255408
          Numbering:
            – Type: volume
              Value: 57
          Titles:
            – TitleFull: Materials Research Bulletin
              Type: main
ResultId 1