Bibliographic Details
| Title: |
Dot formation with 170-nm dimensions using a thermal lithography technique |
| Authors: |
Kuwahara, M. kuwaco-kuwahara@aist.go.jp, Kim, J.H., Tominaga, J. |
| Source: |
Microelectronic Engineering. Jun2003, Vol. 67/68, p651. 6p. |
| Subjects: |
Lithography, Photoresists |
| Abstract: |
We have developed a lithographic technique called ‘Thermal Lithography’ for application during the mastering process of ultra-high density optical disks. A Gaussian distribution of light intensity in a focused laser spot produces a spatially confined hot area that is of far smaller size than the laser spot size. The hot area induces a thermal cross-linking reaction in photoresist film, with the result that minute structures are fabricated after development. In this paper, we describe the use of this technique to fabricate 170-nm size dots in a photoresist film, each separated by a distance of 200 nm, shorter than the diffraction limit of 310 nm given by our optical set-up. We also confirmed that the size and height of the dots are approximately proportional to the incident laser power. [Copyright &y& Elsevier] |
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| Database: |
Engineering Source |
