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Dot formation with 170-nm dimensions using a thermal lithography technique

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Title: Dot formation with 170-nm dimensions using a thermal lithography technique
Authors: Kuwahara, M. kuwaco-kuwahara@aist.go.jp, Kim, J.H., Tominaga, J.
Source: Microelectronic Engineering. Jun2003, Vol. 67/68, p651. 6p.
Subjects: Lithography, Photoresists
Abstract: We have developed a lithographic technique called ‘Thermal Lithography’ for application during the mastering process of ultra-high density optical disks. A Gaussian distribution of light intensity in a focused laser spot produces a spatially confined hot area that is of far smaller size than the laser spot size. The hot area induces a thermal cross-linking reaction in photoresist film, with the result that minute structures are fabricated after development. In this paper, we describe the use of this technique to fabricate 170-nm size dots in a photoresist film, each separated by a distance of 200 nm, shorter than the diffraction limit of 310 nm given by our optical set-up. We also confirmed that the size and height of the dots are approximately proportional to the incident laser power. [Copyright &y& Elsevier]
Copyright of Microelectronic Engineering is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
FullText Text:
  Availability: 0
Header DbId: egs
DbLabel: Engineering Source
An: 9920886
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
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  Data: Dot formation with 170-nm dimensions using a thermal lithography technique
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  Data: <searchLink fieldCode="AR" term="%22Kuwahara%2C+M%2E%22">Kuwahara, M.</searchLink><i> kuwaco-kuwahara@aist.go.jp</i><br /><searchLink fieldCode="AR" term="%22Kim%2C+J%2EH%2E%22">Kim, J.H.</searchLink><br /><searchLink fieldCode="AR" term="%22Tominaga%2C+J%2E%22">Tominaga, J.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Microelectronic+Engineering%22">Microelectronic Engineering</searchLink>. Jun2003, Vol. 67/68, p651. 6p.
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  Data: <searchLink fieldCode="DE" term="%22Lithography%22">Lithography</searchLink><br /><searchLink fieldCode="DE" term="%22Photoresists%22">Photoresists</searchLink>
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  Label: Abstract
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  Data: We have developed a lithographic technique called ‘Thermal Lithography’ for application during the mastering process of ultra-high density optical disks. A Gaussian distribution of light intensity in a focused laser spot produces a spatially confined hot area that is of far smaller size than the laser spot size. The hot area induces a thermal cross-linking reaction in photoresist film, with the result that minute structures are fabricated after development. In this paper, we describe the use of this technique to fabricate 170-nm size dots in a photoresist film, each separated by a distance of 200 nm, shorter than the diffraction limit of 310 nm given by our optical set-up. We also confirmed that the size and height of the dots are approximately proportional to the incident laser power. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Microelectronic Engineering is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1016/S0167-9317(03)00127-8
    Languages:
      – Code: eng
        Text: English
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        PageCount: 6
        StartPage: 651
    Subjects:
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        Type: general
      – SubjectFull: Photoresists
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      – TitleFull: Dot formation with 170-nm dimensions using a thermal lithography technique
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            NameFull: Kuwahara, M.
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            NameFull: Kim, J.H.
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            – D: 01
              M: 06
              Text: Jun2003
              Type: published
              Y: 2003
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              Value: 01679317
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              Value: 67/68
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            – TitleFull: Microelectronic Engineering
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