Quantitative off-axis electron holography of GaAs p-n junctions prepared by focused ion beam milling.

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Bibliographic Details
Title: Quantitative off-axis electron holography of GaAs p-n junctions prepared by focused ion beam milling.
Authors: Cooper D; CEA LETI - Minatec, 17 rue des Martyrs, 38054 Grenoble, Cedex 9, France. david.cooper@cea.fr, Truche R, Twitchett-Harrison AC, Dunin-Borkowski RE, Midgley PA
Source: Journal of microscopy [J Microsc] 2009 Jan; Vol. 233 (1), pp. 102-13.
Publication Type: Journal Article; Research Support, Non-U.S. Gov't
Journal Info: Publisher: Published for the Royal Microscopical Society by Blackwell Scientific Publications Country of Publication: England NLM ID: 0204522 Publication Model: Print Cited Medium: Internet ISSN: 1365-2818 (Electronic) Linking ISSN: 00222720 NLM ISO Abbreviation: J Microsc Subsets: PubMed not MEDLINE
Database: MEDLINE Ultimate
Description
ISSN:1365-2818
DOI:10.1111/j.1365-2818.2008.03101.x