Scaling of high-field transport and localized heating in graphene transistors.

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Bibliographic Details
Title: Scaling of high-field transport and localized heating in graphene transistors.
Authors: Bae MH; Micro & Nanotechnology Lab, University of Illinois, Urbana-Champaign, Illinois 61801, United States., Islam S, Dorgan VE, Pop E
Source: ACS nano [ACS Nano] 2011 Oct 25; Vol. 5 (10), pp. 7936-44. Date of Electronic Publication: 2011 Sep 13.
Publication Type: Journal Article; Research Support, U.S. Gov't, Non-P.H.S.
Journal Info: Publisher: American Chemical Society Country of Publication: United States NLM ID: 101313589 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1936-086X (Electronic) Linking ISSN: 19360851 NLM ISO Abbreviation: ACS Nano Subsets: PubMed not MEDLINE
Database: MEDLINE Ultimate
Description
ISSN:1936-086X
DOI:10.1021/nn202239y