Finite element simulations of electrostatic dopant potentials in thin semiconductor specimens for electron holography.

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Bibliographic Details
Title: Finite element simulations of electrostatic dopant potentials in thin semiconductor specimens for electron holography.
Authors: Somodi PK; Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, United Kingdom., Twitchett-Harrison AC, Midgley PA, Kardynał BE, Barnes CH, Dunin-Borkowski RE
Source: Ultramicroscopy [Ultramicroscopy] 2013 Nov; Vol. 134, pp. 160-6. Date of Electronic Publication: 2013 Jul 16.
Publication Type: Journal Article; Research Support, Non-U.S. Gov't
Journal Info: Publisher: Elsevier Country of Publication: Netherlands NLM ID: 7513702 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1879-2723 (Electronic) Linking ISSN: 03043991 NLM ISO Abbreviation: Ultramicroscopy Subsets: MEDLINE
Database: MEDLINE Ultimate
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