2-D Materials for Ultrascaled Field-Effect Transistors: One Hundred Candidates under the Ab Initio Microscope.
Saved in:
| Title: | 2-D Materials for Ultrascaled Field-Effect Transistors: One Hundred Candidates under the Ab Initio Microscope. |
|---|---|
| Authors: | Klinkert C; Integrated System Laboratory, ETH Zurich, CH-8092 Zurich, Switzerland., Szabó Á; Integrated System Laboratory, ETH Zurich, CH-8092 Zurich, Switzerland., Stieger C; Integrated System Laboratory, ETH Zurich, CH-8092 Zurich, Switzerland., Campi D; Theory and Simulation of Materials (THEOS) and National Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland., Marzari N; Theory and Simulation of Materials (THEOS) and National Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland., Luisier M; Integrated System Laboratory, ETH Zurich, CH-8092 Zurich, Switzerland. |
| Source: | ACS nano [ACS Nano] 2020 Jul 28; Vol. 14 (7), pp. 8605-8615. Date of Electronic Publication: 2020 Jun 24. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: American Chemical Society Country of Publication: United States NLM ID: 101313589 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1936-086X (Electronic) Linking ISSN: 19360851 NLM ISO Abbreviation: ACS Nano Subsets: MEDLINE; PubMed not MEDLINE |
| Database: | MEDLINE Ultimate |
| ISSN: | 1936-086X |
|---|---|
| DOI: | 10.1021/acsnano.0c02983 |
