| Authors: |
Choi YB; Department of Physics, Pohang University of Science and Technology, Pohang, Republic of Korea., Xie Y; Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China., Chen CZ; Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China.; Institute for Advanced Study and School of Physical Science and Technology, Soochow University, Suzhou, China., Park J; Department of Physics, Pohang University of Science and Technology, Pohang, Republic of Korea., Song SB; Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea., Yoon J; Max Plank Institute for Microstructure Physics, Halle (Saale), Germany., Kim BJ; Department of Physics, Pohang University of Science and Technology, Pohang, Republic of Korea.; Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang, Republic of Korea., Taniguchi T; Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Ibaraki, Japan., Watanabe K; Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Ibaraki, Japan., Kim J; Department of Physics, Pohang University of Science and Technology, Pohang, Republic of Korea.; Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea., Fong KC; Raytheon BBN Technologies, Quantum Information Processing Group, Cambridge, MA, USA. kc.fong@raytheon.com., Ali MN; Max Plank Institute for Microstructure Physics, Halle (Saale), Germany. maz@berkeley.edu., Law KT; Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China. phlaw@ust.hk., Lee GH; Department of Physics, Pohang University of Science and Technology, Pohang, Republic of Korea. lghman@postech.ac.kr.; Asia Pacific Center for Theoretical Physics, Pohang, Republic of Korea. lghman@postech.ac.kr. |
