| Authors: |
Amir W; Department of Electrical, Electronic and Computer Engineering, University of Ulsan, Ulsan, 44610, Korea., Shin JW; Department of Electrical, Electronic and Computer Engineering, University of Ulsan, Ulsan, 44610, Korea., Shin KY; Department of Electrical, Electronic and Computer Engineering, University of Ulsan, Ulsan, 44610, Korea., Kim JM; Korea Advanced Nano Fab Center, Suwon, Gyeonggi‑do, 16229, Korea., Cho CY; Korea Advanced Nano Fab Center, Suwon, Gyeonggi‑do, 16229, Korea., Park KH; Korea Advanced Nano Fab Center, Suwon, Gyeonggi‑do, 16229, Korea., Hoshi T; NTT Device Technology Laboratories, NTT Corporation, Atsugi, Kanagawa, 243‑0198, Japan., Tsutsumi T; NTT Device Technology Laboratories, NTT Corporation, Atsugi, Kanagawa, 243‑0198, Japan., Sugiyama H; NTT Device Technology Laboratories, NTT Corporation, Atsugi, Kanagawa, 243‑0198, Japan., Matsuzaki H; NTT Device Technology Laboratories, NTT Corporation, Atsugi, Kanagawa, 243‑0198, Japan., Kim TW; Department of Electrical, Electronic and Computer Engineering, University of Ulsan, Ulsan, 44610, Korea. twkim78@ulsan.ac.kr. |
