APA (7th ed.) Citation

W, A., JW, S., KY, S., JM, K., CY, C., KH, P., . . . TW, K. (2021). Author Correction: A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors. Scientific reports, 11(1), 23667. https://doi.org/10.1038/s41598-021-02854-3

Chicago Style (17th ed.) Citation

W, Amir, et al. "Author Correction: A Quantitative Approach for Trap Analysis Between Al0.25Ga0.75N and GaN in High Electron Mobility Transistors." Scientific Reports 11, no. 1 (2021): 23667. https://doi.org/10.1038/s41598-021-02854-3.

MLA (9th ed.) Citation

W, Amir, et al. "Author Correction: A Quantitative Approach for Trap Analysis Between Al0.25Ga0.75N and GaN in High Electron Mobility Transistors." Scientific Reports, vol. 11, no. 1, 2021, p. 23667, https://doi.org/10.1038/s41598-021-02854-3.