Author Correction: A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors.
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| Title: | Author Correction: A quantitative approach for trap analysis between Al |
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| Authors: | Amir W; Department of Electrical, Electronic and Computer Engineering, University of Ulsan, Ulsan, 44610, Korea., Shin JW; Department of Electrical, Electronic and Computer Engineering, University of Ulsan, Ulsan, 44610, Korea., Shin KY; Department of Electrical, Electronic and Computer Engineering, University of Ulsan, Ulsan, 44610, Korea., Kim JM; Korea Advanced Nano Fab Center, Suwon, Gyeonggi‑do, 16229, Korea., Cho CY; Korea Advanced Nano Fab Center, Suwon, Gyeonggi‑do, 16229, Korea., Park KH; Korea Advanced Nano Fab Center, Suwon, Gyeonggi‑do, 16229, Korea., Hoshi T; NTT Device Technology Laboratories, NTT Corporation, Atsugi, Kanagawa, 243‑0198, Japan., Tsutsumi T; NTT Device Technology Laboratories, NTT Corporation, Atsugi, Kanagawa, 243‑0198, Japan., Sugiyama H; NTT Device Technology Laboratories, NTT Corporation, Atsugi, Kanagawa, 243‑0198, Japan., Matsuzaki H; NTT Device Technology Laboratories, NTT Corporation, Atsugi, Kanagawa, 243‑0198, Japan., Kim TW; Department of Electrical, Electronic and Computer Engineering, University of Ulsan, Ulsan, 44610, Korea. twkim78@ulsan.ac.kr. |
| Source: | Scientific reports [Sci Rep] 2021 Dec 02; Vol. 11 (1), pp. 23667. Date of Electronic Publication: 2021 Dec 02. |
| Publication Type: | Published Erratum |
| Journal Info: | Publisher: Nature Publishing Group Country of Publication: England NLM ID: 101563288 Publication Model: Electronic Cited Medium: Internet ISSN: 2045-2322 (Electronic) Linking ISSN: 20452322 NLM ISO Abbreviation: Sci Rep Subsets: MEDLINE; PubMed not MEDLINE |
| Database: | MEDLINE Ultimate |
| FullText | Links: – Type: pdflink Text: Availability: 0 |
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| Header | DbId: mdl DbLabel: MEDLINE Ultimate An: 34857865 AccessLevel: 2 PubTypeId: unknown PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Author Correction: A quantitative approach for trap analysis between Al<subscript>0.25</subscript>Ga<subscript>0.75</subscript>N and GaN in high electron mobility transistors. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Amir+W%22">Amir W</searchLink>; Department of Electrical, Electronic and Computer Engineering, University of Ulsan, Ulsan, 44610, Korea.<br /><searchLink fieldCode="AU" term="%22Shin+JW%22">Shin JW</searchLink>; Department of Electrical, Electronic and Computer Engineering, University of Ulsan, Ulsan, 44610, Korea.<br /><searchLink fieldCode="AU" term="%22Shin+KY%22">Shin KY</searchLink>; Department of Electrical, Electronic and Computer Engineering, University of Ulsan, Ulsan, 44610, Korea.<br /><searchLink fieldCode="AU" term="%22Kim+JM%22">Kim JM</searchLink>; Korea Advanced Nano Fab Center, Suwon, Gyeonggi‑do, 16229, Korea.<br /><searchLink fieldCode="AU" term="%22Cho+CY%22">Cho CY</searchLink>; Korea Advanced Nano Fab Center, Suwon, Gyeonggi‑do, 16229, Korea.<br /><searchLink fieldCode="AU" term="%22Park+KH%22">Park KH</searchLink>; Korea Advanced Nano Fab Center, Suwon, Gyeonggi‑do, 16229, Korea.<br /><searchLink fieldCode="AU" term="%22Hoshi+T%22">Hoshi T</searchLink>; NTT Device Technology Laboratories, NTT Corporation, Atsugi, Kanagawa, 243‑0198, Japan.<br /><searchLink fieldCode="AU" term="%22Tsutsumi+T%22">Tsutsumi T</searchLink>; NTT Device Technology Laboratories, NTT Corporation, Atsugi, Kanagawa, 243‑0198, Japan.<br /><searchLink fieldCode="AU" term="%22Sugiyama+H%22">Sugiyama H</searchLink>; NTT Device Technology Laboratories, NTT Corporation, Atsugi, Kanagawa, 243‑0198, Japan.<br /><searchLink fieldCode="AU" term="%22Matsuzaki+H%22">Matsuzaki H</searchLink>; NTT Device Technology Laboratories, NTT Corporation, Atsugi, Kanagawa, 243‑0198, Japan.<br /><searchLink fieldCode="AU" term="%22Kim+TW%22">Kim TW</searchLink>; Department of Electrical, Electronic and Computer Engineering, University of Ulsan, Ulsan, 44610, Korea. twkim78@ulsan.ac.kr. – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22101563288%22">Scientific reports</searchLink> [Sci Rep] 2021 Dec 02; Vol. 11 (1), pp. 23667. <i>Date of Electronic Publication: </i>2021 Dec 02. – Name: TypePub Label: Publication Type Group: TypPub Data: Published Erratum – Name: TitleSource Label: Journal Info Group: Src Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22Nature+Publishing+Group%22">Nature Publishing Group </searchLink><i>Country of Publication: </i>England <i>NLM ID: </i>101563288 <i>Publication Model: </i>Electronic <i>Cited Medium: </i>Internet <i>ISSN: </i>2045-2322 (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2220452322%22">20452322 </searchLink><i>NLM ISO Abbreviation: </i>Sci Rep <i>Subsets: </i>MEDLINE; PubMed not MEDLINE |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=mdl&AN=34857865 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1038/s41598-021-02854-3 Languages: – Code: eng Text: English PhysicalDescription: Pagination: StartPage: 23667 Titles: – TitleFull: Author Correction: A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Amir W – PersonEntity: Name: NameFull: Shin JW – PersonEntity: Name: NameFull: Shin KY – PersonEntity: Name: NameFull: Kim JM – PersonEntity: Name: NameFull: Cho CY – PersonEntity: Name: NameFull: Park KH – PersonEntity: Name: NameFull: Hoshi T – PersonEntity: Name: NameFull: Tsutsumi T – PersonEntity: Name: NameFull: Sugiyama H – PersonEntity: Name: NameFull: Matsuzaki H – PersonEntity: Name: NameFull: Kim TW IsPartOfRelationships: – BibEntity: Dates: – D: 02 M: 12 Text: 2021 Dec 02 Type: published Y: 2021 Identifiers: – Type: issn-electronic Value: 2045-2322 Numbering: – Type: volume Value: 11 – Type: issue Value: 1 Titles: – TitleFull: Scientific reports Type: main |
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