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High-Frequency and High-Power Performance of n-Type GaN Epilayers with Low Electron Density Grown on Native Substrate.

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Title: High-Frequency and High-Power Performance of n-Type GaN Epilayers with Low Electron Density Grown on Native Substrate.
Authors: Balagula RM; Terahertz Photonics Laboratory, Center for Physical Sciences and Technology, Saulėtekio al. 3, LT-10257 Vilnius, Lithuania., Subačius L; Terahertz Photonics Laboratory, Center for Physical Sciences and Technology, Saulėtekio al. 3, LT-10257 Vilnius, Lithuania., Jorudas J; Terahertz Photonics Laboratory, Center for Physical Sciences and Technology, Saulėtekio al. 3, LT-10257 Vilnius, Lithuania., Janonis V; Terahertz Photonics Laboratory, Center for Physical Sciences and Technology, Saulėtekio al. 3, LT-10257 Vilnius, Lithuania., Prystawko P; Laboratory of Semiconductor Characterization, Institute of High Pressure Physics PAS (UNIPRESS), ul. Sokołowska 29/37, 01-142 Warsaw, Poland., Grabowski M; Laboratory of Semiconductor Characterization, Institute of High Pressure Physics PAS (UNIPRESS), ul. Sokołowska 29/37, 01-142 Warsaw, Poland., Kašalynas I; Terahertz Photonics Laboratory, Center for Physical Sciences and Technology, Saulėtekio al. 3, LT-10257 Vilnius, Lithuania.
Source: Materials (Basel, Switzerland) [Materials (Basel)] 2022 Mar 11; Vol. 15 (6). Date of Electronic Publication: 2022 Mar 11.
Publication Type: Journal Article
Journal Info: Publisher: MDPI Country of Publication: Switzerland NLM ID: 101555929 Publication Model: Electronic Cited Medium: Print ISSN: 1996-1944 (Print) Linking ISSN: 19961944 NLM ISO Abbreviation: Materials (Basel) Subsets: PubMed not MEDLINE
Database: MEDLINE Ultimate
Description
ISSN:1996-1944
DOI:10.3390/ma15062066