F, H., B, S., Z, Y., C, Y., V, T., X, H., . . . S, W. (2023). Enhanced Switching Reliability of Hf0.5Zr0.5O2 Ferroelectric Films Induced by Interface Engineering. ACS applied materials & interfaces, 15(43), 50246. https://doi.org/10.1021/acsami.3c08895
Chicago Style (17th ed.) CitationF, Huang, et al. "Enhanced Switching Reliability of Hf0.5Zr0.5O2 Ferroelectric Films Induced by Interface Engineering." ACS Applied Materials & Interfaces 15, no. 43 (2023): 50246. https://doi.org/10.1021/acsami.3c08895.
MLA (9th ed.) CitationF, Huang, et al. "Enhanced Switching Reliability of Hf0.5Zr0.5O2 Ferroelectric Films Induced by Interface Engineering." ACS Applied Materials & Interfaces, vol. 15, no. 43, 2023, p. 50246, https://doi.org/10.1021/acsami.3c08895.