Author Correction: Atomic-level polarization reversal in sliding ferroelectric semiconductors.

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Title: Author Correction: Atomic-level polarization reversal in sliding ferroelectric semiconductors.
Authors: Sui F; Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China., Li H; Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China., Qi R; Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China. rjqi@ee.ecnu.edu.cn.; National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China. rjqi@ee.ecnu.edu.cn., Jin M; College of Materials, Shanghai Dianji University, Shanghai, 201306, China. jmaish@aliyun.com., Lv Z; Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China., Wu M; School of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China., Liu X; Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China., Zheng Y; Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China., Liu B; Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China., Ge R; Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China., Wu YN; Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China. ynwu@phy.ecnu.edu.cn., Huang R; Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China., Yue F; Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China. fyyue@ee.ecnu.edu.cn.; Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi, 030006, China. fyyue@ee.ecnu.edu.cn.; Shanghai Center of Brain-inspired Intelligent Materials and Devices, East China Normal University, Shanghai, 200062, China. fyyue@ee.ecnu.edu.cn., Chu J; Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China.; National Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Shanghai, 200083, China., Duan C; Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China.; Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi, 030006, China.; Shanghai Center of Brain-inspired Intelligent Materials and Devices, East China Normal University, Shanghai, 200062, China.
Source: Nature communications [Nat Commun] 2024 May 23; Vol. 15 (1), pp. 4396. Date of Electronic Publication: 2024 May 23.
Publication Type: Published Erratum
Journal Info: Publisher: Nature Pub. Group Country of Publication: England NLM ID: 101528555 Publication Model: Electronic Cited Medium: Internet ISSN: 2041-1723 (Electronic) Linking ISSN: 20411723 NLM ISO Abbreviation: Nat Commun Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
Description
ISSN:2041-1723
DOI:10.1038/s41467-024-48945-3