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Author Correction: Atomic-level polarization reversal in sliding ferroelectric semiconductors.

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Title: Author Correction: Atomic-level polarization reversal in sliding ferroelectric semiconductors.
Authors: Sui F; Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China., Li H; Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China., Qi R; Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China. rjqi@ee.ecnu.edu.cn.; National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China. rjqi@ee.ecnu.edu.cn., Jin M; College of Materials, Shanghai Dianji University, Shanghai, 201306, China. jmaish@aliyun.com., Lv Z; Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China., Wu M; School of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China., Liu X; Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China., Zheng Y; Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China., Liu B; Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China., Ge R; Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China., Wu YN; Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China. ynwu@phy.ecnu.edu.cn., Huang R; Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China., Yue F; Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China. fyyue@ee.ecnu.edu.cn.; Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi, 030006, China. fyyue@ee.ecnu.edu.cn.; Shanghai Center of Brain-inspired Intelligent Materials and Devices, East China Normal University, Shanghai, 200062, China. fyyue@ee.ecnu.edu.cn., Chu J; Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China.; National Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Shanghai, 200083, China., Duan C; Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China.; Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi, 030006, China.; Shanghai Center of Brain-inspired Intelligent Materials and Devices, East China Normal University, Shanghai, 200062, China.
Source: Nature communications [Nat Commun] 2024 May 23; Vol. 15 (1), pp. 4396. Date of Electronic Publication: 2024 May 23.
Publication Type: Published Erratum
Journal Info: Publisher: Nature Pub. Group Country of Publication: England NLM ID: 101528555 Publication Model: Electronic Cited Medium: Internet ISSN: 2041-1723 (Electronic) Linking ISSN: 20411723 NLM ISO Abbreviation: Nat Commun Subsets: MEDLINE; PubMed not MEDLINE
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  Data: Author Correction: Atomic-level polarization reversal in sliding ferroelectric semiconductors.
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  Data: <searchLink fieldCode="AU" term="%22Sui+F%22">Sui F</searchLink>; Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China.<br /><searchLink fieldCode="AU" term="%22Li+H%22">Li H</searchLink>; Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China.<br /><searchLink fieldCode="AU" term="%22Qi+R%22">Qi R</searchLink>; Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China. rjqi@ee.ecnu.edu.cn.; National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China. rjqi@ee.ecnu.edu.cn.<br /><searchLink fieldCode="AU" term="%22Jin+M%22">Jin M</searchLink>; College of Materials, Shanghai Dianji University, Shanghai, 201306, China. jmaish@aliyun.com.<br /><searchLink fieldCode="AU" term="%22Lv+Z%22">Lv Z</searchLink>; Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China.<br /><searchLink fieldCode="AU" term="%22Wu+M%22">Wu M</searchLink>; School of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China.<br /><searchLink fieldCode="AU" term="%22Liu+X%22">Liu X</searchLink>; Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China.<br /><searchLink fieldCode="AU" term="%22Zheng+Y%22">Zheng Y</searchLink>; Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China.<br /><searchLink fieldCode="AU" term="%22Liu+B%22">Liu B</searchLink>; Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China.<br /><searchLink fieldCode="AU" term="%22Ge+R%22">Ge R</searchLink>; Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China.<br /><searchLink fieldCode="AU" term="%22Wu+YN%22">Wu YN</searchLink>; Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China. ynwu@phy.ecnu.edu.cn.<br /><searchLink fieldCode="AU" term="%22Huang+R%22">Huang R</searchLink>; Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China.<br /><searchLink fieldCode="AU" term="%22Yue+F%22">Yue F</searchLink>; Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China. fyyue@ee.ecnu.edu.cn.; Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi, 030006, China. fyyue@ee.ecnu.edu.cn.; Shanghai Center of Brain-inspired Intelligent Materials and Devices, East China Normal University, Shanghai, 200062, China. fyyue@ee.ecnu.edu.cn.<br /><searchLink fieldCode="AU" term="%22Chu+J%22">Chu J</searchLink>; Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China.; National Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Shanghai, 200083, China.<br /><searchLink fieldCode="AU" term="%22Duan+C%22">Duan C</searchLink>; Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China.; Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi, 030006, China.; Shanghai Center of Brain-inspired Intelligent Materials and Devices, East China Normal University, Shanghai, 200062, China.
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  Data: <searchLink fieldCode="JN" term="%22101528555%22">Nature communications</searchLink> [Nat Commun] 2024 May 23; Vol. 15 (1), pp. 4396. <i>Date of Electronic Publication: </i>2024 May 23.
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