Large-Scale Analysis of Defects in Atomically Thin Semiconductors using Hyperspectral Line Imaging.

Saved in:
Bibliographic Details
Title: Large-Scale Analysis of Defects in Atomically Thin Semiconductors using Hyperspectral Line Imaging.
Authors: Lim S; Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, 16499, South Korea., Kim TW; Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, 16499, South Korea., Park T; Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, 16499, South Korea., Heo YS; Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, 16499, South Korea., Yang S; Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea.; Department of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea., Seo H; Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, 16499, South Korea., Suh J; Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea.; Department of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea., Lee JU; Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, 16499, South Korea.
Source: Small (Weinheim an der Bergstrasse, Germany) [Small] 2024 Oct; Vol. 20 (42), pp. e2400737. Date of Electronic Publication: 2024 Jun 14.
Publication Type: Journal Article
Journal Info: Publisher: Wiley-VCH Country of Publication: Germany NLM ID: 101235338 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1613-6829 (Electronic) Linking ISSN: 16136810 NLM ISO Abbreviation: Small Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
Full text is not displayed to guests.
Description
ISSN:1613-6829
DOI:10.1002/smll.202400737