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Two-dimensional Janus α-Au2XY (X, Y = S/Se/Te) semiconductors with favourable band gaps and high carrier mobilities predicted by first-principles investigations.

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Title: Two-dimensional Janus α-Au2XY (X, Y = S/Se/Te) semiconductors with favourable band gaps and high carrier mobilities predicted by first-principles investigations.
Authors: Hiep NT; Institute of Research and Development, Duy Tan University Da Nang 550000 Vietnam hieunn@duytan.edu.vn.; Faculty of Natural Sciences, Duy Tan University Da Nang 550000 Vietnam., Quang QK; Division of Physics, School of Education, Dong Thap University Cao Lanh 870000 Vietnam., Nhan MTV; Division of Physics, School of Education, Dong Thap University Cao Lanh 870000 Vietnam., Hoang KV; Phenikaa Institute for Advanced Study (PIAS), Phenikaa University Hanoi 12116 Vietnam., Nguyen CQ; Institute of Research and Development, Duy Tan University Da Nang 550000 Vietnam hieunn@duytan.edu.vn.; Faculty of Natural Sciences, Duy Tan University Da Nang 550000 Vietnam., Hoi BD; Faculty of Physics, University of Education, Hue University Hue 530000 Vietnam buidinhhoi@hueuni.edu.vn., Hieu NN; Institute of Research and Development, Duy Tan University Da Nang 550000 Vietnam hieunn@duytan.edu.vn.; Faculty of Natural Sciences, Duy Tan University Da Nang 550000 Vietnam.
Source: RSC advances [RSC Adv] 2025 May 30; Vol. 15 (23), pp. 18114-18122. Date of Electronic Publication: 2025 May 30 (Print Publication: 2025).
Publication Type: Journal Article
Journal Info: Publisher: Royal Society of Chemistry Country of Publication: England NLM ID: 101581657 Publication Model: eCollection Cited Medium: Internet ISSN: 2046-2069 (Electronic) Linking ISSN: 20462069 NLM ISO Abbreviation: RSC Adv Subsets: PubMed not MEDLINE
Database: MEDLINE Ultimate
Description
ISSN:2046-2069
DOI:10.1039/d5ra01319d