Low Resistivity and High Carrier Concentration in SnO2 Thin Films: The Impact of Nitrogen-Hydrogen Annealing Treatments.

Saved in:
Bibliographic Details
Title: Low Resistivity and High Carrier Concentration in SnO2 Thin Films: The Impact of Nitrogen-Hydrogen Annealing Treatments.
Authors: Chen QZ; Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China., Zhang ZX; Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China.; School of Advanced Manufacturing, Fuzhou University, Quanzhou 362200, China., Fu WQ; Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China., Duan JR; Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China., Yang YX; Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China., Chen CN; Department of Computer Science and Information Engineering, Asia University, Taichung 413, Taiwan., Lien SY; Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China.; Department of Computer Science and Information Engineering, Asia University, Taichung 413, Taiwan.
Source: Nanomaterials (Basel, Switzerland) [Nanomaterials (Basel)] 2025 Jun 25; Vol. 15 (13). Date of Electronic Publication: 2025 Jun 25.
Publication Type: Journal Article
Journal Info: Publisher: MDPI AG Country of Publication: Switzerland NLM ID: 101610216 Publication Model: Electronic Cited Medium: Print ISSN: 2079-4991 (Print) Linking ISSN: 20794991 NLM ISO Abbreviation: Nanomaterials (Basel) Subsets: PubMed not MEDLINE
Database: MEDLINE Ultimate
Full text is not displayed to guests.
Description
ISSN:2079-4991
DOI:10.3390/nano15130986