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Low Resistivity and High Carrier Concentration in SnO2 Thin Films: The Impact of Nitrogen-Hydrogen Annealing Treatments.

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Title: Low Resistivity and High Carrier Concentration in SnO2 Thin Films: The Impact of Nitrogen-Hydrogen Annealing Treatments.
Authors: Chen QZ; Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China., Zhang ZX; Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China.; School of Advanced Manufacturing, Fuzhou University, Quanzhou 362200, China., Fu WQ; Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China., Duan JR; Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China., Yang YX; Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China., Chen CN; Department of Computer Science and Information Engineering, Asia University, Taichung 413, Taiwan., Lien SY; Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China.; Department of Computer Science and Information Engineering, Asia University, Taichung 413, Taiwan.
Source: Nanomaterials (Basel, Switzerland) [Nanomaterials (Basel)] 2025 Jun 25; Vol. 15 (13). Date of Electronic Publication: 2025 Jun 25.
Publication Type: Journal Article
Journal Info: Publisher: MDPI AG Country of Publication: Switzerland NLM ID: 101610216 Publication Model: Electronic Cited Medium: Print ISSN: 2079-4991 (Print) Linking ISSN: 20794991 NLM ISO Abbreviation: Nanomaterials (Basel) Subsets: PubMed not MEDLINE
Database: MEDLINE Ultimate
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  Data: Low Resistivity and High Carrier Concentration in SnO<subscript>2</subscript> Thin Films: The Impact of Nitrogen-Hydrogen Annealing Treatments.
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  Data: <searchLink fieldCode="AU" term="%22Chen+QZ%22">Chen QZ</searchLink>; Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China.<br /><searchLink fieldCode="AU" term="%22Zhang+ZX%22">Zhang ZX</searchLink>; Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China.; School of Advanced Manufacturing, Fuzhou University, Quanzhou 362200, China.<br /><searchLink fieldCode="AU" term="%22Fu+WQ%22">Fu WQ</searchLink>; Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China.<br /><searchLink fieldCode="AU" term="%22Duan+JR%22">Duan JR</searchLink>; Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China.<br /><searchLink fieldCode="AU" term="%22Yang+YX%22">Yang YX</searchLink>; Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China.<br /><searchLink fieldCode="AU" term="%22Chen+CN%22">Chen CN</searchLink>; Department of Computer Science and Information Engineering, Asia University, Taichung 413, Taiwan.<br /><searchLink fieldCode="AU" term="%22Lien+SY%22">Lien SY</searchLink>; Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China.; Department of Computer Science and Information Engineering, Asia University, Taichung 413, Taiwan.
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  Data: <searchLink fieldCode="JN" term="%22101610216%22">Nanomaterials (Basel, Switzerland)</searchLink> [Nanomaterials (Basel)] 2025 Jun 25; Vol. 15 (13). <i>Date of Electronic Publication: </i>2025 Jun 25.
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  Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22MDPI+AG%22">MDPI AG </searchLink><i>Country of Publication: </i>Switzerland <i>NLM ID: </i>101610216 <i>Publication Model: </i>Electronic <i>Cited Medium: </i>Print <i>ISSN: </i>2079-4991 (Print) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2220794991%22">20794991 </searchLink><i>NLM ISO Abbreviation: </i>Nanomaterials (Basel) <i>Subsets: </i>PubMed not MEDLINE
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        Value: 10.3390/nano15130986
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        Text: English
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      – TitleFull: Low Resistivity and High Carrier Concentration in SnO2 Thin Films: The Impact of Nitrogen-Hydrogen Annealing Treatments.
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              Text: 2025 Jun 25
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