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Defect engineering and hydrogen-induced reversibility in metallic states of MoS2 grain boundaries.

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Bibliographic Details
Title: Defect engineering and hydrogen-induced reversibility in metallic states of MoS2 grain boundaries.
Authors: Zhou H; Institute of High Performance Computing (IHPC), Agency for Science, Technology and Research (A*STAR), 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632, Republic of Singapore. zhouhb@a-star.edu.sg., Sorkin V; Institute of High Performance Computing (IHPC), Agency for Science, Technology and Research (A*STAR), 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632, Republic of Singapore. zhouhb@a-star.edu.sg., Yu Z; Institute of High Performance Computing (IHPC), Agency for Science, Technology and Research (A*STAR), 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632, Republic of Singapore. zhouhb@a-star.edu.sg., Ang KW; Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583, Republic of Singapore.; Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Republic of Singapore., Zhang YW; Institute of High Performance Computing (IHPC), Agency for Science, Technology and Research (A*STAR), 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632, Republic of Singapore. zhouhb@a-star.edu.sg.
Source: Nanoscale [Nanoscale] 2025 Oct 02; Vol. 17 (38), pp. 22226-22234. Date of Electronic Publication: 2025 Oct 02.
Publication Type: Journal Article
Journal Info: Publisher: RSC Pub Country of Publication: England NLM ID: 101525249 Publication Model: Electronic Cited Medium: Internet ISSN: 2040-3372 (Electronic) Linking ISSN: 20403364 NLM ISO Abbreviation: Nanoscale Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
Description
ISSN:2040-3372
DOI:10.1039/d5nr02232k