Defect engineering and hydrogen-induced reversibility in metallic states of MoS2 grain boundaries.
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| Title: | Defect engineering and hydrogen-induced reversibility in metallic states of MoS |
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| Authors: | Zhou H; Institute of High Performance Computing (IHPC), Agency for Science, Technology and Research (A*STAR), 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632, Republic of Singapore. zhouhb@a-star.edu.sg., Sorkin V; Institute of High Performance Computing (IHPC), Agency for Science, Technology and Research (A*STAR), 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632, Republic of Singapore. zhouhb@a-star.edu.sg., Yu Z; Institute of High Performance Computing (IHPC), Agency for Science, Technology and Research (A*STAR), 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632, Republic of Singapore. zhouhb@a-star.edu.sg., Ang KW; Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583, Republic of Singapore.; Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Republic of Singapore., Zhang YW; Institute of High Performance Computing (IHPC), Agency for Science, Technology and Research (A*STAR), 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632, Republic of Singapore. zhouhb@a-star.edu.sg. |
| Source: | Nanoscale [Nanoscale] 2025 Oct 02; Vol. 17 (38), pp. 22226-22234. Date of Electronic Publication: 2025 Oct 02. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: RSC Pub Country of Publication: England NLM ID: 101525249 Publication Model: Electronic Cited Medium: Internet ISSN: 2040-3372 (Electronic) Linking ISSN: 20403364 NLM ISO Abbreviation: Nanoscale Subsets: MEDLINE; PubMed not MEDLINE |
| Database: | MEDLINE Ultimate |
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