| Authors: |
Hsiao KY; Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 300, Taiwan. mylu@mx.nthu.edu.tw., Lin YD; Scientific Research Division, National Synchrotron Radiation Research Center, Hsinchu 300092, Taiwan., Lin YR; Scientific Research Division, National Synchrotron Radiation Research Center, Hsinchu 300092, Taiwan., Chin CW; College of Semiconductor Research, National Tsing Hua University, Hsinchu, 30013, Taiwan., Lin CH; Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 300, Taiwan. mylu@mx.nthu.edu.tw., Cyu RH; Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 300, Taiwan. mylu@mx.nthu.edu.tw., Jhan DJ; Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 300, Taiwan. mylu@mx.nthu.edu.tw., Lin YG; Scientific Research Division, National Synchrotron Radiation Research Center, Hsinchu 300092, Taiwan.; Department of Materials Science and Engineering, National Yang-Ming Chiao Tung University, Hsinchu 300093, Taiwan., Chueh YL; Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 300, Taiwan. mylu@mx.nthu.edu.tw.; College of Semiconductor Research, National Tsing Hua University, Hsinchu, 30013, Taiwan.; Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan.; Department of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea., Lu MY; Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 300, Taiwan. mylu@mx.nthu.edu.tw.; College of Semiconductor Research, National Tsing Hua University, Hsinchu, 30013, Taiwan. |
