High-density three-dimensional integration of dynamic random-access memory using vertical dual-gate IGZO TFTs.
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| Title: | High-density three-dimensional integration of dynamic random-access memory using vertical dual-gate IGZO TFTs. |
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| Authors: | Liao F; State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China., Zhu Z; Bejing Superstring Academy of Memory Technology, Beijing, China., Li Z; State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China., Yang G; State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China. yangguanhua@ime.ac.cn., Liu M; State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China., Chen K; State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China., Lu W; State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China., Wu Z; State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China., Zhang X; State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China., Mao N; State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China., Kang BM; Bejing Superstring Academy of Memory Technology, Beijing, China., Shi J; Bejing Superstring Academy of Memory Technology, Beijing, China., Wu XS; Bejing Superstring Academy of Memory Technology, Beijing, China., Jin M; Bejing Superstring Academy of Memory Technology, Beijing, China., Liu C; Bejing Superstring Academy of Memory Technology, Beijing, China., Zhang J; Bejing Superstring Academy of Memory Technology, Beijing, China., Yu Y; Bejing Superstring Academy of Memory Technology, Beijing, China., Wang GL; Bejing Superstring Academy of Memory Technology, Beijing, China., Lu C; State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China., Yue J; State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China., Wang L; State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China., Wang J; State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China., Geng D; State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China., Lu N; State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China., Zhao C; Bejing Superstring Academy of Memory Technology, Beijing, China. Chao.Zhao@bjsamt.org.cn., Nathan A; Darwin College, Cambridge University, Cambridge, UK. an299@cam.ac.uk.; School of Information Science and Engineering, Shandong University, Qingdao, China. an299@cam.ac.uk., Li L; State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China. lingli@ime.ac.cn., Liu M; State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China. |
| Source: | Nature communications [Nat Commun] 2025 Dec 08; Vol. 16 (1), pp. 10932. Date of Electronic Publication: 2025 Dec 08. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: Nature Pub. Group Country of Publication: England NLM ID: 101528555 Publication Model: Electronic Cited Medium: Internet ISSN: 2041-1723 (Electronic) Linking ISSN: 20411723 NLM ISO Abbreviation: Nat Commun Subsets: MEDLINE; PubMed not MEDLINE |
| Database: | MEDLINE Ultimate |
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| ISSN: | 2041-1723 |
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| DOI: | 10.1038/s41467-025-65925-3 |
