| Authors: |
Kim Y; Graduate School of Semiconductor Materials and Devices Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea., Song S; Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea., Kim HH; Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea., Choi J; Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea., Yoo J; Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea., Yun E; Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea., Yu C; Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea., Son HY; Graduate School of Semiconductor Materials and Devices Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea., Cha C; Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea., Kwon MS; Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea., Choi MK; Graduate School of Semiconductor Materials and Devices Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.; Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea. |
