Tellurium-Vacancy Engineering in Ultrathin Bi2Te3 Enables Broadband Multifunctional Optoelectronic Synapse for Energy-Efficient Neuromorphic and Optical Information Processing.
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| Title: | Tellurium-Vacancy Engineering in Ultrathin Bi |
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| Authors: | Nandi S; Department of Physics, Indian Institute of Technology Guwahati, Guwahati, India., Ghosal S; Department of Physics, Indian Institute of Technology Guwahati, Guwahati, India., Choudhary G; Department of Physics, Indian Institute of Technology Guwahati, Guwahati, India., Roy SS; Department of Physics, Indian Institute of Technology Guwahati, Guwahati, India., Meyyappan M; Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati, India., Giri PK; Department of Physics, Indian Institute of Technology Guwahati, Guwahati, India.; Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati, India. |
| Source: | Small (Weinheim an der Bergstrasse, Germany) [Small] 2026 Mar; Vol. 22 (15), pp. e11836. Date of Electronic Publication: 2026 Jan 23. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: Wiley-VCH Country of Publication: Germany NLM ID: 101235338 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1613-6829 (Electronic) Linking ISSN: 16136810 NLM ISO Abbreviation: Small Subsets: MEDLINE; PubMed not MEDLINE |
| Database: | MEDLINE Ultimate |
| ISSN: | 1613-6829 |
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| DOI: | 10.1002/smll.202511836 |
