| Authors: |
Athena FF; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States., Hartanto J; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States.; Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States., Passlack M; Corporate Research, Taiwan Semiconductor Manufacturing Company, Ltd., San Jose, California 95134, United States., Evans JC; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States., Qin J; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States., Dede D; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States., Jana K; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States., Liu S; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States., Peña T; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States., Pop E; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States., Pitner G; Corporate Research, Taiwan Semiconductor Manufacturing Company, Ltd., San Jose, California 95134, United States., Radu IP; Corporate Research, Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu 300-096, Taiwan., McIntyre PC; Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States., Wong HP; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States. |
